发明授权
- 专利标题： Laser-assisted CVD process forming oxide superconducting films
- 专利标题（中）： 激光辅助CVD工艺形成氧化物超导薄膜
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申请号： US833509申请日： 1992-02-11
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公开(公告)号： US5276012A公开(公告)日： 1994-01-04
- 发明人: Takahisa Ushida , Kazutoshi Higashiyama , Izumi Hirabayashi , Shoji Tanaka
- 申请人： Takahisa Ushida , Kazutoshi Higashiyama , Izumi Hirabayashi , Shoji Tanaka
- 申请人地址： JPX Aichi JPX Tokyo JPX Tokyo
- 专利权人： NGK Spark Plug Co., Ltd.,International Superconductivity Technology Center,Hitachi Ltd.
- 当前专利权人： NGK Spark Plug Co., Ltd.,International Superconductivity Technology Center,Hitachi Ltd.
- 当前专利权人地址： JPX Aichi JPX Tokyo JPX Tokyo
- 优先权： JPX3-41326 19910212
- 主分类号： H01L39/24
- IPC分类号： H01L39/24 ; B05D3/06 ; C23C16/00
摘要：
A method is disclosed of forming an oxide superconducting film comprising the steps of (1) mixing (a) the vapors of organic metal materials in such proportions as to provide a predetermined metal composition, or (b) said organic metal materials in such proportions as to provide a predetermined metal composition vaporizing and mixture, and (2) bringing the mixture into contact with a heated substrate so that an oxide superconducting film is formed on said substrate by a chemical vapor deposition process, wherein laser light is applied onto said substrate during formation of said oxide superconducting film on said substrate, whereby the crystallographic orientation of said oxide superconducting film being formed in the irradiated area of said substrate is such that the c-axis is parallel to the substrate.
公开/授权文献
- US4152765A Programmer unit for N/C systems 公开/授权日：1979-05-01