发明授权
US5278433A Light-emitting semiconductor device using gallium nitride group compound
with double layer structures for the n-layer and/or the i-layer
失效
使用具有用于n层和/或i层的双层结构的氮化镓基化合物的发光半导体器件
- 专利标题: Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
- 专利标题(中): 使用具有用于n层和/或i层的双层结构的氮化镓基化合物的发光半导体器件
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申请号: US926022申请日: 1992-08-07
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公开(公告)号: US5278433A公开(公告)日: 1994-01-11
- 发明人: Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
- 申请人: Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
- 申请人地址: JPX Nishikasugai JPX Aichi JPX Nagoya JPX Tokyo
- 专利权人: Toyoda Gosei Co., Ltd.,Kabushiki Kaisha Toyota Chuo Kenkyusho,Nagoya University,Research Development Corporation of Japan
- 当前专利权人: Toyoda Gosei Co., Ltd.,Kabushiki Kaisha Toyota Chuo Kenkyusho,Nagoya University,Research Development Corporation of Japan
- 当前专利权人地址: JPX Nishikasugai JPX Aichi JPX Nagoya JPX Tokyo
- 优先权: JPX2-50209 19900228; JPX2-50210 19900228; JPX2-50211 19900228; JPX2-50212 19900228
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/02 ; H01L33/32
摘要:
Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n.sup.+ -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i.sub.L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i.sub.H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
公开/授权文献
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