发明授权
- 专利标题: Signature circuit for non-volatile memory device
- 专利标题(中): 用于非易失性存储器件的签名电路
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申请号: US656501申请日: 1991-02-19
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公开(公告)号: US5280451A公开(公告)日: 1994-01-18
- 发明人: Takao Akaogi
- 申请人: Takao Akaogi
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX2-37582 19900219
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C5/00 ; G11C16/20 ; G11C29/00
摘要:
A signature circuit stores signature information indicative of one of a plurality of device functions of a non-volatile memory device which includes first memory cells which are respectively coupled to one of a plurality of word lines and to one of a plurality of bit lines. The signature circuit includes second memory cells which are respectively connected to the bit lines which are grouped into a plurality of blocks, at least one predetermined word line which is provided exclusively for the second memory cells and is connected to each of the memory cells, and a selecting circuit coupled to the bit lines for selecting one of the blocks. The second memory cells in each of the blocks store one kind of signature information, so that a number of blocks is equal to a number of kinds of signature information that can be stored in the signature circuit.
公开/授权文献
- US5772322A Resonant microbeam temperature sensor 公开/授权日:1998-06-30