发明授权
- 专利标题: Semiconductor sensor of electrostatic capacitance type
- 专利标题(中): 半导体传感器的静电电容型
-
申请号: US838891申请日: 1992-02-21
-
公开(公告)号: US5285097A公开(公告)日: 1994-02-08
- 发明人: Yutaka Hirai
- 申请人: Yutaka Hirai
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-30394 19910225
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L21/28 ; H01L27/20 ; H01L29/84
摘要:
A semiconductor sensor has a semiconductor substrate including both of a conductive or semiconductor surface and an insulative surface and a pair of conductive members provided on said conductive or semiconductor surface of the substrate. There is constructed a sensor section in which at least one of the pair of conductive members can be deformed and an electrostatic capacitance between the pair of conductive members is variable. The semiconductor substrate has a functional element which is electrically connected to the sensor section.
公开/授权文献
- US5874034A Swell reducing extrusion die 公开/授权日:1999-02-23
信息查询
IPC分类: