公开(公告)号：US5576060A

公开(公告)日：1996-11-19

申请号：US487561

申请日：1995-06-07

申请人： Yutaka Hirai ,  Toshiyuki Komatsu ,  Katsumi Nakagawa

发明人： Yutaka Hirai ,  Toshiyuki Komatsu ,  Katsumi Nakagawa

IPC分类号： C23C14/00 ,  C23C14/16 ,  C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23C16/509 ,  G03G5/082 ,  H01L31/09 ,  H01L31/20 ,  C23C16/00 ,  B05D3/06

CPC分类号： C23C14/16 ,  C23C14/0036 ,  C23C14/0057 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/507 ,  C23C16/509 ,  G03G5/08221 ,  G03G5/08228 ,  G03G5/08242 ,  G03G5/08278 ,  H01L31/095 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A CVD process of forming a hydrogenated amorphous silicon film comprising not more than 40 atomic percent of hydrogen atoms is disclosed, which comprises introducing a silicon-containing gas and a gas containing impurity for controlling conductivity of said film into a film-forming space, wherein the concentration of the gas containing the impurity is controlled during film formation to vary the content of the impurity in the thickness direction of the amorphous silicon film.

摘要翻译： 公开了形成不超过40原子％氢原子的氢化非晶硅膜的CVD工艺，其包括将含硅气体和含有杂质的气体导入到成膜空间中，其中所述杂质用于控制所述膜的导电性，其中 在成膜期间控制含有杂质的气体的浓度以改变非晶硅膜的厚度方向上杂质的含量。

公开(公告)号：US5268571A

公开(公告)日：1993-12-07

申请号：US888789

申请日：1992-05-27

申请人： Keisuke Yamamoto ,  Yutaka Hirai ,  Masaru Nakayama ,  Takayuki Yagi ,  Yuji Kasanuki ,  Yoshio Suzuki

发明人： Keisuke Yamamoto ,  Yutaka Hirai ,  Masaru Nakayama ,  Takayuki Yagi ,  Yuji Kasanuki ,  Yoshio Suzuki

IPC分类号： B81B3/00 ,  G01N27/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q30/02 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q70/06 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/14 ,  H01L41/09 ,  H01L41/18 ,  H02N2/00 ,  H01J37/26

CPC分类号： G01Q60/16 ,  B82Y35/00 ,  G01Q10/045 ,  G01Q70/06 ,  G11B9/1436 ,  H01L41/094 ,  B82Y10/00 ,  G01Q80/00 ,  Y10S977/837 ,  Y10S977/861 ,  Y10S977/872 ,  Y10S977/873

摘要： A micro-displacement element comprises a unimorph cantilever having a piezoelectric thin film, a pair of electrodes between which the piezoelectric thin film is sandwiched, and an elastic thin film. One end of the cantilever is supported by a support, and the other end thereof is provided with a probe. The micro-displacement element can be used particularly as an array of plural elements, for an information processing apparatus in which the element faces to a recording medium such that an information recording pulse voltage or an information reproducing bias voltage can be applied to between the probe and the recording medium.

摘要翻译： 微位移元件包括具有压电薄膜的单压电晶片，夹在压电薄膜之间的一对电极和弹性薄膜。 悬臂的一端由支撑件支撑，并且其另一端设置有探针。 微位移元件可以特别地用作多个元件的阵列，对于其中元件面向记录介质的信息处理设备，使得可以在探头之间施加信息记录脉冲电压或信息再现偏置电压 和记录介质。

公开(公告)号：US4920387A

公开(公告)日：1990-04-24

申请号：US406182

申请日：1989-09-13

申请人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

发明人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/18

CPC分类号： H01L33/18 ,  B82Y20/00 ,  H01L33/0012 ,  H01L33/0058 ,  H01L33/06 ,  H05B33/145

摘要： A light emitting device includes a luminescent layer having at least two layers comprising non-single crystalline silicon containing hydrogen atoms laminated and having a homo-junction, and at least a pair of electrodes connected electrically to the luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 10.sup.16 cm.sup.-3.eV.sup.-1 or less.

摘要翻译： 发光器件包括发光层，其具有至少两层，包含层叠并具有均聚点的氢原子的非单晶硅，以及至少一对与发光层电连接的电极，非单晶硅 具有2.0eV以上的光学带隙和1016cm -3eV-1以下的中间间隙的局部水平密度的层。

公开(公告)号：US4877650A

公开(公告)日：1989-10-31

申请号：US31133

申请日：1987-03-30

申请人： Jinsho Matsuyama ,  Yutaka Hirai ,  Masao Ueki ,  Akira Sakai

发明人： Jinsho Matsuyama ,  Yutaka Hirai ,  Masao Ueki ,  Akira Sakai

IPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/205

CPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming a deposited film comprises effecting a step (a) and a step (b) at least one time, the step (a) being introduction of a starting material (A) which is either one of a gaseous starting material for formation of a deposited film or a gaseous halogenic oxidizing agent having the property of oxidative action on said gaseous starting material into a film forming space in which a substrate for film formation is arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step (b) being the introduction of a starting material (B) which is the other of said gaseous starting material and said gaseous halogenic oxidizing agent into said film forming space, thereby causing surface reaction on said adsorbed layer (I) to occur to form a deposited film (i).

公开(公告)号：US4830946A

公开(公告)日：1989-05-16

申请号：US198582

申请日：1988-05-16

申请人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Tadaji Fukuda

发明人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Tadaji Fukuda

IPC分类号： G03G5/082

CPC分类号： G03G5/08235 ,  G03G5/08221 ,  G03G5/08292

摘要： An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

摘要翻译： 用于电子照相的图像形成部件具有包含由硅和/或锗作为基体的氢化非晶半导体和基质中所含的至少一种化学改性剂如碳，氮和氧的光电导层。

公开(公告)号：US4796981A

公开(公告)日：1989-01-10

申请号：US674602

申请日：1984-11-26

申请人： Yukuo Nishimura ,  Masahiro Haruta ,  Yutaka Hirai ,  Kunihiro Sakai ,  Hiroshi Matsuda

发明人： Yukuo Nishimura ,  Masahiro Haruta ,  Yutaka Hirai ,  Kunihiro Sakai ,  Hiroshi Matsuda

IPC分类号： G02F1/01

CPC分类号： G02F1/0147

摘要： Optical modulation is effected by heating a monomolecular film or a built-up film of monomolecular layers.

摘要翻译： 通过加热单分子膜或单分子层的积层膜来进行光学调制。

公开(公告)号：US4766477A

公开(公告)日：1988-08-23

申请号：US885336

申请日：1986-07-11

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yoshiyuki Osada ,  Satoshi Omata ,  Yutaka Hirai ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yoshiyuki Osada ,  Satoshi Omata ,  Yutaka Hirai ,  Takashi Nakagiri

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/203 ,  H01L21/205 ,  H01L27/12 ,  H01L29/04 ,  H01L29/167 ,  H01L29/78 ,  H01L29/786 ,  H01L31/0368

CPC分类号： H01L31/03682 ,  H01L29/04 ,  H01L29/167 ,  H01L29/78 ,  H01L29/78675 ,  Y02E10/546 ,  Y10S148/122

摘要： A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.

摘要翻译： 半导体器件主要包括含有选自由碳，硫，氮和氧组成的组中的至少一个原子的多晶硅膜的半导体层。

公开(公告)号：US4695717A

公开(公告)日：1987-09-22

申请号：US725497

申请日：1985-04-22

申请人： Yutaka Hirai ,  Masahiro Haruta ,  Yukuo Nishimura ,  Hiroshi Matsuda ,  Takashi Nakagiri

发明人： Yutaka Hirai ,  Masahiro Haruta ,  Yukuo Nishimura ,  Hiroshi Matsuda ,  Takashi Nakagiri

IPC分类号： H01L31/09 ,  H01L31/14 ,  H01L51/30 ,  H04N1/028 ,  H01J31/50

CPC分类号： H04N1/028 ,  H01L31/095 ,  H01L31/141 ,  H01L51/0054 ,  H01L51/0064 ,  H01L51/42

摘要： A semi-conductor device comprising a lamination of a photoconductive layer, a charge-retaining layer and a display layer, provided between electroconductive films, and an electronic apparatus utilizing said semi-conductor device are provided.

摘要翻译： 提供了一种半导体器件，其包括设置在导电膜之间的光电导层，电荷保持层和显示层的叠层以及利用所述半导体器件的电子设备。

公开(公告)号：US4479149A

公开(公告)日：1984-10-23

申请号：US160160

申请日：1980-06-17

申请人： Seishiro Yoshioka ,  Yutaka Hirai ,  Tadaji Fukuda ,  Masaki Fukaya ,  Takashi Nakagiri

发明人： Seishiro Yoshioka ,  Yutaka Hirai ,  Tadaji Fukuda ,  Masaki Fukaya ,  Takashi Nakagiri

IPC分类号： H01L27/146 ,  H04N1/195 ,  H04N1/02 ,  H04N1/10

CPC分类号： H04N1/1951 ,  H01L27/14665 ,  H04N1/19505 ,  H04N1/19531 ,  H04N1/19563 ,  H04N1/19584

摘要： A photo-electric converter principally constructed with a photo-electric conversion unit wherein m.times.n photo-electric conversion elements, each having a light receiving window to form a pel and constructed with a layer of light receiving body and two electrodes provided on both sides thereof, are arranged two-dimensionally in an array of m ranks and n files, and wherein the light receiving windows of the photo-electric conversion elements constituting a rank are arranged at an equally spaced pitch of an integral multiple of that of pels. A signal processing circuit processes and produces as an output a signal which has been subjected to the photo-electric conversion in the photo-electric conversion unit.

摘要翻译： 一种光电转换器，主要由光电转换单元构成，其中mxn光电转换元件，每个光电转换元件具有形成像素的光接收窗口，并且由两层设置的光接收体和两个电极构成， 以m行和n档的阵列二维地排列，并且其中构成秩的光电转换元件的光接收窗口以与像素的整数倍的等间隔的间距排列。 信号处理电路在光电转换单元中处理并产生已经经过光电转换的信号作为输出。

公开(公告)号：US4471042A

公开(公告)日：1984-09-11

申请号：US36226

申请日：1979-05-04

申请人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Tadaji Fukuda

发明人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Tadaji Fukuda

IPC分类号： G03G5/082 ,  G03G5/04 ,  B32B9/04

CPC分类号： G03G5/08235 ,  G03G5/08221 ,  G03G5/08292

摘要： An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

摘要翻译： 用于电子照相的图像形成部件具有包含由硅和/或锗作为基体的氢化非晶半导体和基质中所含的至少一种化学改性剂如碳，氮和氧的光电导层。