Invention Grant
- Patent Title: Structure and method internal photoemission detection
- Patent Title (中): 结构和方法内部光电检测
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Application No.: US877433Application Date: 1992-04-30
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Publication No.: US5285098APublication Date: 1994-02-08
- Inventor: Sebastian R. Borrello
- Applicant: Sebastian R. Borrello
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: G01J1/02
- IPC: G01J1/02 ; H01L27/146 ; H01L31/0236 ; H01L31/108 ; H01L29/44 ; H01L29/48 ; H01L31/06
Abstract:
A method and structure are provided for internal photoemission detection. At least one groove (30a) is formed in a side of a semiconductor layer (32). A silicide film (58) is formed in each groove (30a) over the semiconductor layer (32). A metal contact region (44) is electrically coupled to the silicide film (58) such that a voltage at the metal contact region (44) indicates an intensity of radiation incident on the structure (28).
Public/Granted literature
- US4765017A Wiping device for wiping cover plates of headlights of motor vehicles Public/Granted day:1988-08-23
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