公开(公告)号：US5449908A

公开(公告)日：1995-09-12

申请号：US175876

申请日：1993-12-30

Applicant: Mark V. Wadsworth ,  Sebastian R. Borrello ,  Roland W. Gooch

Inventor： Mark V. Wadsworth ,  Sebastian R. Borrello ,  Roland W. Gooch

IPC: H01L27/148

CPC classification number: H01L27/14881 ,  H01L27/14856

Abstract: A hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer (e.g. epoxy 31). Infrared-sensitive time delay and integration CCD columns (14) charge coupled to sense nodes (e.g. diodes 16) are disposed in the imaging substrate. High speed signal processing channels (e.g. capacitive transimpedance amplifier 18, correlated double sampling circuit 20 and multiplexing shift register 22) are disposed in the conditioning substrate. The sense nodes are connected to the signal processing channels with low capacitance hybrid leads (e.g A1 17).

Abstract translation: 包括使用粘合剂层（例如环氧树脂31）安装在调理基板上的高速信号调理基板（例如Si 12）和成像基板（例如HgCdTe 10）的混合半导体成像结构。 耦合到感测节点（例如二极管16）的红外敏感时间延迟和积分CCD列（14）被布置在成像衬底中。 高速信号处理通道（例如，电容跨阻放大器18，相关双采样电路20和复用移位寄存器22）设置在调理基板中。 感测节点连接到具有低电容混合引线（例如A1 17）的信号处理通道。

公开(公告)号：US5285098A

公开(公告)日：1994-02-08

申请号：US877433

申请日：1992-04-30

Applicant: Sebastian R. Borrello

Inventor： Sebastian R. Borrello

IPC: G01J1/02 ,  H01L27/146 ,  H01L31/0236 ,  H01L31/108 ,  H01L29/44 ,  H01L29/48 ,  H01L31/06

CPC classification number: H01L27/14649 ,  H01L31/0236 ,  H01L31/108 ,  Y02E10/50

Abstract: A method and structure are provided for internal photoemission detection. At least one groove (30a) is formed in a side of a semiconductor layer (32). A silicide film (58) is formed in each groove (30a) over the semiconductor layer (32). A metal contact region (44) is electrically coupled to the silicide film (58) such that a voltage at the metal contact region (44) indicates an intensity of radiation incident on the structure (28).

Abstract translation: 提供了一种用于内部光电发射检测的方法和结构。 至少一个凹槽（30a）形成在半导体层（32）的一侧。 在半导体层（32）上的每个凹槽（30a）中形成硅化物膜（58）。 金属接触区域（44）电耦合到硅化物膜（58），使得金属接触区域（44）处的电压指示入射在结构（28）上的辐射强度。

公开(公告)号：US4027319A

公开(公告)日：1977-05-31

申请号：US364995

申请日：1973-05-29

Applicant: Sebastian R. Borrello ,  Jimmy D. Sawyer

Inventor： Sebastian R. Borrello ,  Jimmy D. Sawyer

IPC: H01L31/00 ,  H01L31/11 ,  H01L31/18 ,  H01L29/48

CPC classification number: H01L31/00 ,  H01L31/1105 ,  H01L31/18

Abstract: Disclosed is a phototransistor comprised of an indium arsenide n-type semiconductor substrate, a thin, relatively lightly doped p-type cadmium diffused region in the substrate forming a photosensitive diode junction, and a metal film in rectifying contact with the p-type diffused region to form a Schottky barrier.The method for fabricating the transistor comprises producing the shallow cadmium diffusion, etching the surface of the diffused region to a predetermined depth to reduce the doping level and the surface oxide level, and depositing the metal film on the etched surface of the diffused region.

Abstract translation: 公开了一种光电晶体管，其由形成感光二极管结的衬底中的砷化铟n型半导体衬底，薄的相对轻掺杂的p型镉扩散区域构成，以及与p型扩散区域整流接触的金属膜 形成肖特基屏障。

公开(公告)号：US5959299A

公开(公告)日：1999-09-28

申请号：US831101

申请日：1997-04-01

Applicant: Carlos A. Castro ,  Malcolm J. Bevan ,  Sebastian R. Borrello ,  Kent R. Carson ,  Luigi Colombo ,  Herbert F. Schaake ,  Donald F. Weirauch

Inventor： Carlos A. Castro ,  Malcolm J. Bevan ,  Sebastian R. Borrello ,  Kent R. Carson ,  Luigi Colombo ,  Herbert F. Schaake ,  Donald F. Weirauch

IPC: H01L27/146 ,  H01L31/0296

CPC classification number: H01L27/14652

Abstract: This is a sensor for, and a method of, determining if a particular type of flame is present, using at least two uncooled HgCdTe detector films on a common IR transmissive substrate. Specific examples of the types of radiation which can be identified include gasoline flames, natural gas flames, and organic combustion flames (identified, e.g., by comparing the amount of combined carbon dioxide and carbon monoxide to the amount of water vapor). The ratio of carbon dioxide to carbon monoxide can also be determined. The sensor can include a first HgCdTe filter (88) on a common IR transmissive substrate (42), a first uncooled HgCdTe detector film (86) over the first filter (88), and a second uncooled HgCdTe detector film (92) on a CdTe insulator which is either on the first uncooled HgCdTe detector film, or on a second HgCdTe filter (94) provided on the common IR transmissive substrate.

Abstract translation: 这是一种用于确定特定类型的火焰是否存在的传感器，并且使用在共同的IR透射基底上使用至少两个非冷却的HgCdTe检测膜。 可以鉴定的辐射类型的具体实例包括汽油火焰，天然气火焰和有机燃烧火焰（例如通过比较组合的二氧化碳和一氧化碳的量与水蒸气的量的比较来确定）。 也可以确定二氧化碳与一氧化碳的比例。 传感器可以包括在公共IR透射基板（42）上的第一HgCdTe滤光器（88），在第一过滤器（88）上方的第一非冷却的HgCdTe检测器膜（86）和位于第一过滤器（88）上的第二非冷却HgCdTe检测器膜 CdTe绝缘体位于第一非冷却的HgCdTe检测器膜上，或者位于公共IR透射基底上的第二HgCdTe滤光器（94）上。

公开(公告)号：US5818051A

公开(公告)日：1998-10-06

申请号：US831103

申请日：1997-04-01

Applicant: Peter D. Dreiske ,  Sebastian R. Borrello

Inventor： Peter D. Dreiske ,  Sebastian R. Borrello

IPC: H01L27/146 ,  H01L31/102 ,  H01L31/103 ,  H01L31/11 ,  H01L27/142 ,  H01L31/101

CPC classification number: H01L27/14652 ,  H01L31/102 ,  H01L31/1032 ,  H01L31/11

Abstract: A multiple color infrared detector is provided which is formed from a photodiode (13), a photoconductor (24), and an insulating layer of material (20) disposed between the photodiode (13) and the photoconductor (24). The photodiode (13) detects infrared radiation in the spectral band between about 3 .mu.m and about 5 .mu.m, and the photoconductor (24) detects infrared radiation in the spectral band between about 8 .mu.m and about 13 .mu.m.

Abstract translation: 提供了由光电二极管（13），光电导体（24）和设置在光电二极管（13）和感光体（24）之间的材料（20）的绝缘层形成的多色红外检测器。 光电二极管（13）检测在约3μm至约5μm之间的光谱带中的红外辐射，并且光电导体（24）检测在约8μm至约13μm之间的光谱带中的红外辐射。

公开(公告)号：US5543641A

公开(公告)日：1996-08-06

申请号：US471897

申请日：1995-06-07

Applicant: Mark V. Wadsworth ,  Sebastian R. Borrello ,  Roland W. Gooch

Inventor： Mark V. Wadsworth ,  Sebastian R. Borrello ,  Roland W. Gooch

IPC: H01L27/148 ,  H01L29/768

CPC classification number: H01L27/14881 ,  H01L27/14856

Abstract: A preferred embodiment of this invention is a hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer (e.g. epoxy 31). Infrared-sensitive time delay and integration CCD columns (14) charge coupled to sense nodes (e.g. diodes 16) are disposed in the imaging substrate. High speed signal processing channels (e.g. capacitive transimpedance amplifier 18, congelated double sampling circuit 20 and multiplexing shift register 22) are disposed in the conditioning substrate. The sense nodes are connected to the signal processing channels with low capacitance hybrid leads (e.g AI 17).

Abstract translation: 本发明的优选实施例是一种混合半导体成像结构，其包括使用粘合剂层（例如环氧树脂31）安装在调理基板上的高速信号调理基板（例如Si 12）和成像基板（例如HgCdTe 10）。 耦合到感测节点（例如二极管16）的红外敏感时间延迟和积分CCD列（14）被布置在成像衬底中。 高速信号处理通道（例如，电容互阻放大器18，凝结双采样电路20和复用移位寄存器22）设置在调理基板中。 感测节点连接到具有低电容混合引线（例如AI 17）的信号处理通道。

公开(公告)号：US3963926A

公开(公告)日：1976-06-15

申请号：US539893

申请日：1975-01-09

Applicant: Sebastian R. Borrello

Inventor： Sebastian R. Borrello

IPC: G01J5/06 ,  H01L21/306 ,  H01L31/0216 ,  H01L31/024 ,  H01J31/49

CPC classification number: H01L21/30608 ,  G01J5/06 ,  H01L31/02164 ,  H01L31/024

Abstract: A thermal energy receiver is disclosed comprising a cooling means for cooling an infrared detector including a detector array for producing electrical representations of thermal energy radiating from a scene and an array of cold shields providing an individual cold shield aperture for substantially shielding each detector element of the array from energy generated outside the solid angle subtended by the optical elements, and electro-optics for converting the electrical output of the detector array to visual signals for displaying the scene.

公开(公告)号：US6103544A

公开(公告)日：2000-08-15

申请号：US131893

申请日：1998-08-10

Applicant: Peter D. Dreiske ,  Sebastian R. Borrello

Inventor： Peter D. Dreiske ,  Sebastian R. Borrello

IPC: H01L27/146 ,  H01L31/102 ,  H01L31/103 ,  H01L31/11 ,  H01L21/00

CPC classification number: H01L27/14652 ,  H01L31/102 ,  H01L31/1032 ,  H01L31/11

Abstract: A multiple color infrared detector is provided which is formed from a photodiode (13), a photoconductor (24), and an insulating layer of material (20) disposed between the photodiode (13) and the photoconductor (24). The photodiode (13) detects infrared radiation in the spectral band between about 3 .mu.m and about 5 .mu.m, and the photoconductor (24) detects infrared radiation in the spectral band between about 8 .mu.m and about 13 .mu.m

Abstract translation: 提供了由光电二极管（13），光电导体（24）和设置在光电二极管（13）和感光体（24）之间的材料（20）的绝缘层形成的多色红外检测器。 光电二极管（13）检测在约3μm至约5μm之间的光谱带中的红外辐射，并且光电导体（24）检测在约8μm至约13μm之间的光谱带中的红外辐射

公开(公告)号：US4956686A

公开(公告)日：1990-09-11

申请号：US021373

申请日：1987-03-03

Applicant: Sebastian R. Borrello ,  Charles G. Roberts

Inventor： Sebastian R. Borrello ,  Charles G. Roberts

IPC: H01L27/146

CPC classification number: H01L27/14649

Abstract: An infrared detector in the form of a focal plane array containing infrared detectors of two sensitivity types is disclosed. The detectors may be based on alloys of HgCdTe with cutoff wavelengths of 5 microns and 10 microns. The two types of detectors are in close proximity and thereby avoid the time delay problem. The two spectral sensitivities make possible the determinaton of spectral signatures and target identification. Further, the two types of detectors are arrayed to permit use of a single set of read lines together with electronic addressing for selecting the detector type, thereby simplifying the output structure and processor design.

Abstract translation: 公开了一种包含两种灵敏度类型的红外检测器的焦平面阵列形式的红外检测器。 检测器可以基于截止波长为5微米和10微米的HgCdTe合金。 两种类型的检测器紧密相邻，从而避免了时间延迟问题。 两种光谱灵敏度使谱图特征和目标识别的确定成为可能。 此外，两种类型的检测器被排列以允许使用单组读取线以及用于选择检测器类型的电子寻址，从而简化输出结构和处理器设计。

公开(公告)号：US4807007A

公开(公告)日：1989-02-21

申请号：US820872

申请日：1986-01-16

Applicant: Sebastian R. Borrello ,  Charles G. Roberts

Inventor： Sebastian R. Borrello ,  Charles G. Roberts

IPC: H01L27/144 ,  H01L31/0216 ,  H01L31/113 ,  H01L29/78 ,  H01L27/14

CPC classification number: H01L31/1133 ,  H01L27/1443 ,  H01L31/02164

Abstract: A method and an apparatus which permits use of a metal-insulator-semiconductor device as an infrared detector. A single layer of metal is provided having an extremely thin portion through which infrared radiation can pass and a thick portion through which infrared radiation cannot pass. Both of these portions together form the MIS (metal-insulator-semiconductor) gate. A voltage is applied to the metal which creates a potential well within the semiconductor substrate below. When the device is exposed to infrared radiation the radiation, causes photons to pass through the thin portion of the MIS gate and generates a charge within the potential well. The thick portion of the MIS gate shields the semiconductor substrate from photons so that no charges are generated in the potential well which is located below this portion of the metal layer. This provides a charge storage region so that the charge which is generated under the thin gate can be stored in the entire potential well created by the gate as a whole. This results in an MIS device having a detector cell which can be several times larger than photon sensitive dimensions. In effect, each detector element can have a storage capacity of a gate biased to ten volts or more. A three design is also disclosed which has the detection region separated from the storage region.

Abstract translation: 允许使用金属 - 绝缘体 - 半导体器件作为红外检测器的方法和装置。 提供单层金属，其具有非常薄的部分，红外辐射可以通过该部分穿过红外辐射不能通过的厚部分。 这两个部分一起形成MIS（金属 - 绝缘体 - 半导体）栅极。 向金属施加电压，在下面的半导体衬底内形成势阱。 当设备暴露于红外辐射时，辐射使光子通过MIS门的薄部分，并在潜在的井内产生电荷。 MIS栅极的厚部分将半导体衬底与光子屏蔽，使得在位于金属层的该部分下方的势阱中不产生电荷。 这提供了电荷存储区域，使得在薄栅极下产生的电荷可以整体存储在由栅极产生的整个势阱中。 这导致MIS器件具有可以比光敏尺寸大几倍的检测器单元。 实际上，每个检测器元件可以具有偏置到十伏甚至更高的栅极的存储容量。 还公开了具有与存储区域分离的检测区域的三种设计。