发明授权
- 专利标题： Single step salicidation process
- 专利标题（中）： 单步腐蚀过程
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申请号： US951945申请日： 1992-09-28
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公开(公告)号： US5286678A公开(公告)日： 1994-02-15
- 发明人: Rajiv Rastogi
- 申请人： Rajiv Rastogi
- 申请人地址： CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/28
摘要：
The present invention generally involves the fabrication of semiconductor devices so as to reduce the active region to interconnect interface resistivity. Fabrication begins by forming active regions on a semiconductor device. Next, a titanium metal of approximately 900 .ANG. thickness is deposited on the semiconductor device. The semiconductor device is then annealed in a single step to form the interconnects.
公开/授权文献
- US6031868A Asymmetric digital subscriber loop transceivers 公开/授权日：2000-02-29
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