发明授权
US5288654A Method of making a mushroom-shaped gate electrode of semiconductor device
失效
制造半导体器件的蘑菇状栅电极的方法
- 专利标题： Method of making a mushroom-shaped gate electrode of semiconductor device
- 专利标题（中）： 制造半导体器件的蘑菇状栅电极的方法
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申请号： US14857申请日： 1993-02-08
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公开(公告)号： US5288654A公开(公告)日： 1994-02-22
- 发明人: Nobuyuki Kasai , Shinichi Sakamoto , Takuji Sonoda , Tetsuya Yagi
- 申请人： Nobuyuki Kasai , Shinichi Sakamoto , Takuji Sonoda , Tetsuya Yagi
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-406358 19901226
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/3213 ; H01L21/338 ; H01L29/423 ; H01L29/47 ; H01L29/812 ; H01L21/265
摘要：
A mushroom-shaped gate electrode has a lower end in a recess in a semiconductor active layer on a semiconductor substrate. The gate electrode has an enlarged head. A metallic side wall is disposed on a portion of the leg of the gate electrode adjacent the head. Thus, the gate length of a semiconductor device, such as a field effect transistor, is reduced while the effective cross-sectional area of the gate electrode is increased whereby the noise characteristics of the semiconductor device are improved.
公开/授权文献
- USD359654S Water bottle 公开/授权日：1995-06-27
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