发明授权
- 专利标题： Method of producing varistor
- 专利标题（中）： 制造压敏电阻的方法
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申请号： US942392申请日： 1992-09-09
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公开(公告)号： US5296169A公开(公告)日： 1994-03-22
- 发明人: Hideo Ochi , Akihide Igari , Masaaki Toyoda , Zenbee Nakagawa
- 申请人： Hideo Ochi , Akihide Igari , Masaaki Toyoda , Zenbee Nakagawa
- 申请人地址： JPX
- 专利权人： Somar Corporation
- 当前专利权人： Somar Corporation
- 当前专利权人地址： JPX
- 优先权： JPX4-40102 19920129
- 主分类号： H01C7/10
- IPC分类号： H01C7/10 ; H01C7/112 ; H01C17/00 ; H01B1/06
摘要：
A varistor having a non-linear coefficient of at least 40 and improved stability for DC stress is produced by a method including a step of mixing ZnO powder with a solvent solution of Mn and Pb compounds, a step of calcining the resultig mixture, and a step of pulverizing the calcined product to obtain a pulverized product. These steps are performed while preventing the contamination with a Group IIIb or Ia element, so that the pulverized product has MnO and PbO contents of 3-7 mole % and 0.003-0.01 mole %, respectively, and a content of impurity compounds of a IIIb or Ia element of not greater than 20 ppm by weight. The pulverized product is molded and sintered to obtain the varistor.
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