Sintered varistor material with small particle size
    1.
    发明授权
    Sintered varistor material with small particle size 失效
    烧结压敏电阻材料,粒径小

    公开(公告)号:US5382385A

    公开(公告)日:1995-01-17

    申请号:US856571

    申请日:1992-03-24

    CPC分类号: H01C7/112

    摘要: A varistor material having a non-linear coefficient of at least 30 and a varistor voltage of at least 800 V/mm is disclosed. The varistor is produced by a method including commingling an admixture of ZnO and a manganese compound while preventing the admixture from contacting with a surface containing an element belonging to group IIIb of the Periodic Table. The resulting mixture is calcined and then pulverized while preventing the contact with a IIIb element-containing surface to obtain a pulverized product having a content of impurity compounds of a IIIb element of not greater than 20 ppm by weight. The pulverized product is molded and sintered at such a temperature as to obtain the varistor formed from particles with an average particle size of not greater than 5 .mu.m.

    摘要翻译: 公开了一种非线性系数至少为30且压敏电压为至少800V / mm的非线性电阻材料。 通过包括混合ZnO和锰化合物的混合物同时防止混合物与含有元素周期表IIIb族元素的表面接触的方法来生产压敏电阻。 将所得混合物煅烧,然后粉碎,同时防止与含IIIb元素的表面接触,得到具有不大于20重量ppm的IIIb元素的杂质化合物的粉碎产物。 粉碎产物在这样的温度下成型和烧结,得到由平均粒径不大于5μm的颗粒形成的变阻器。

    Method of producing varistor
    2.
    发明授权
    Method of producing varistor 失效
    制造压敏电阻的方法

    公开(公告)号:US5296169A

    公开(公告)日:1994-03-22

    申请号:US942392

    申请日:1992-09-09

    CPC分类号: H01C7/112

    摘要: A varistor having a non-linear coefficient of at least 40 and improved stability for DC stress is produced by a method including a step of mixing ZnO powder with a solvent solution of Mn and Pb compounds, a step of calcining the resultig mixture, and a step of pulverizing the calcined product to obtain a pulverized product. These steps are performed while preventing the contamination with a Group IIIb or Ia element, so that the pulverized product has MnO and PbO contents of 3-7 mole % and 0.003-0.01 mole %, respectively, and a content of impurity compounds of a IIIb or Ia element of not greater than 20 ppm by weight. The pulverized product is molded and sintered to obtain the varistor.

    摘要翻译: 通过包括将ZnO粉末与Mn和Pb化合物的溶剂溶液混合的步骤,煅烧所得混合物的步骤,以及将所述混合物进行煅烧的步骤,制备具有至少40的非线性系数和DC应力的稳定性的变阻器 粉碎煅烧产物以获得粉碎产物的步骤。 在防止IIIb或Ia族元素污染的同时进行这些步骤,使得粉碎产物的MnO和PbO含量分别为3-7摩尔%和0.003-0.01摩尔%,并且IIIb的杂质化合物的含量 或Ia元素不大于20ppm重量。 粉碎的产品被模制和烧结以获得压敏电阻。

    PIXEL CIRCUIT AND DISPLAY PANEL
    7.
    发明申请
    PIXEL CIRCUIT AND DISPLAY PANEL 审中-公开
    像素电路和显示面板

    公开(公告)号:US20110199356A1

    公开(公告)日:2011-08-18

    申请号:US12742547

    申请日:2007-06-12

    IPC分类号: G06F3/038

    摘要: A pixel circuit includes a first power line that supplies a first power, a single control line, an emission control variable resistance element having one end connected to the first power line and the other end connected to the control line, a second power line that supplies a second power, a light-emitting element that has one end connected to the control line and the other end connected to the second power line and emits light in accordance with data written to the emission control variable resistance element, and a parallel connection variable resistance element having one end connected to the control line and the other end connected to the second power line so that it is parallel with the light-emitting element.

    摘要翻译: 像素电路包括提供第一功率的第一电力线,单个控制线,一端连接到第一电力线的发射控制可变电阻元件和连接到控制线的另一端;第二电力线, 第二功率,发光元件,其一端连接到控制线,另一端连接到第二电源线,并且根据写入发射控制可变电阻元件的数据发光;以及并联连接可变电阻 元件,其一端连接到控制线,另一端连接到第二电源线,使得其与发光元件平行。

    SEMICONDUCTOR SUBSTRATE MANUFACTURE APPARATUS, SEMICONDUCTOR SUBSTRATE MANUFACTURE METHOD, AND SEMICONDUCTOR SUBSTRATE
    8.
    发明申请
    SEMICONDUCTOR SUBSTRATE MANUFACTURE APPARATUS, SEMICONDUCTOR SUBSTRATE MANUFACTURE METHOD, AND SEMICONDUCTOR SUBSTRATE 审中-公开
    半导体基板制造设备,半导体基板制造方法和半导体基板

    公开(公告)号:US20100044890A1

    公开(公告)日:2010-02-25

    申请号:US12450229

    申请日:2007-03-22

    IPC分类号: H01L21/66 G21K5/10 H01L23/544

    摘要: [Problems] To perform predetermined processing such as annealing and coating application of a semiconductor material with high accuracy on a number of semiconductor formation areas formed over a wide region on a surface of a substrate having elasticity such as a plastic substrate even when the substrate expands and contracts.[Solving Means] A semiconductor substrate manufacture apparatus includes: a tracking device (33) having a light-emitting portion (34) which applies light to a substrate surface during tracking, a light-receiving portion (35) which receives the light applied by the light-emitting portion (34) and reflected by the substrate surface, and a position detecting portion (36) which detects the positions of the semiconductor formation areas on the substrate based on the spectrum or intensity of the received light; and a semiconductor processing device for performing the predetermined processing on each of the semiconductor formation areas based on position information from the tracking device (33). For example, an annealing light application device (37) or an inkjet nozzle (41) is used as the semiconductor processing device.

    摘要翻译: [问题]即使当基板膨胀时,也可以在诸如塑料基板的具有弹性的基板的表面上在宽范围上形成的多个半导体形成区域上高精度地退火和涂覆半导体材料的预定处理 和合同。 【解决方案】半导体衬底制造装置包括:跟踪装置(33),其具有在跟踪期间向衬底表面施加光的发光部(34);受光部(35),其接收由 发光部分(34)并被基板表面反射;以及位置检测部分(36),其基于所接收的光的光谱或强度来检测基板上的半导体形成区域的位置; 以及半导体处理装置,用于基于来自跟踪装置(33)的位置信息对每个半导体形成区域执行预定处理。 例如,使用退火光施加装置(37)或喷墨喷嘴(41)作为半导体处理装置。

    Resist material for micro-fabrication with unsaturated dicarboxylic
moiety
    9.
    发明授权
    Resist material for micro-fabrication with unsaturated dicarboxylic moiety 失效
    用于具有不饱和二羧基部分的微制造的抗蚀材料

    公开(公告)号:US4273858A

    公开(公告)日:1981-06-16

    申请号:US926067

    申请日:1978-07-19

    IPC分类号: C08F299/02 G03F7/038 G03C5/00

    摘要: A resist material for micro-fabrication comprising a polymer in which the polymer backbone has thereon a moiety of the formula (I) ##STR1## wherein R represents a hydrogen atom, an alkyl group, an alkenyl group or an aryl group or an aralkyl group, the resist material being curable by electromagnetic radiation such as electron beams, X-rays or deep ultraviolet light with a wave length of less than about 3000A and being particularly suitable as a micro-fabrication resist material.

    摘要翻译: 一种用于微制造的抗蚀剂材料,其包含其中聚合物主链上具有式(I)部分的聚合物,其中R表示氢原子,烷基,烯基或芳基,或 芳族烷基,抗蚀剂材料可通过诸如电子束,X射线或波长小于约3000A的深紫外光等电磁辐射固化,特别适合作为微制造抗蚀剂材料。

    Apparatus and method for driving display panel
    10.
    发明授权
    Apparatus and method for driving display panel 有权
    用于驱动显示面板的装置和方法

    公开(公告)号:US07193590B2

    公开(公告)日:2007-03-20

    申请号:US10863353

    申请日:2004-06-09

    IPC分类号: G09G3/30 G09G3/10

    摘要: An apparatus for driving a display panel having drive lines and capacitive light emitting elements. The apparatus sequentially selects one scanning line from the scanning lines every scanning period of input video data including a gradation level to specify a drive line corresponding to at least one capacitive light emitting element driven to emit light on the one scanning line in accordance with the input video data, generates a driving signal having a pulse width in accordance with the gradation level every scanning period, and applies the one capacitive light emitting element with a voltage equal to or higher than a light emission threshold voltage in a forward direction for a duration in which the driving signal is generated, through the one scanning line and the specified drive line, and applies the specified drive line with a predetermined potential in response to elimination of the driving signal to decrease the voltage applied to the one capacitive light emitting element in the forward direction to a voltage lower than the light emission threshold voltage.

    摘要翻译: 一种用于驱动具有驱动线和电容发光元件的显示面板的装置。 该装置依次从扫描行中选择一条扫描行,每个扫描行包括灰度等级的输入视频数据的每个扫描周期,以指定与至少一个电容发光元件相对应的驱动线,该电容发光元件根据输入被驱动以在一条扫描线上发光 视频数据产生具有根据每个扫描周期的灰度级别的脉冲宽度的驱动信号,并将具有等于或高于发光阈值电压的电容式发光元件在正向上施加一段持续时间 通过一条扫描线和指定的驱动线产生驱动信号,并且响应于消除驱动信号而施加具有预定电位的指定驱动线,以降低施加到该驱动信号中的一个电容发光元件的电压 向前方向到低于发光阈值电压的电压。