摘要:
A varistor material having a non-linear coefficient of at least 30 and a varistor voltage of at least 800 V/mm is disclosed. The varistor is produced by a method including commingling an admixture of ZnO and a manganese compound while preventing the admixture from contacting with a surface containing an element belonging to group IIIb of the Periodic Table. The resulting mixture is calcined and then pulverized while preventing the contact with a IIIb element-containing surface to obtain a pulverized product having a content of impurity compounds of a IIIb element of not greater than 20 ppm by weight. The pulverized product is molded and sintered at such a temperature as to obtain the varistor formed from particles with an average particle size of not greater than 5 .mu.m.
摘要:
A varistor having a non-linear coefficient of at least 40 and improved stability for DC stress is produced by a method including a step of mixing ZnO powder with a solvent solution of Mn and Pb compounds, a step of calcining the resultig mixture, and a step of pulverizing the calcined product to obtain a pulverized product. These steps are performed while preventing the contamination with a Group IIIb or Ia element, so that the pulverized product has MnO and PbO contents of 3-7 mole % and 0.003-0.01 mole %, respectively, and a content of impurity compounds of a IIIb or Ia element of not greater than 20 ppm by weight. The pulverized product is molded and sintered to obtain the varistor.
摘要:
A process for the production of a varistor material having a nonlinear index (.alpha.) of at least 20, which comprises adding a manganese compound to zinc oxide; heating the obtained mixture in the form of a powder in the atomosphere at 1050.degree. to 1150.degree. C.; grinding the material to give a particle size of 150 mesh or below; molding the powder into a desired shape; and sintering the same at 1200.degree. to 1350.degree. C.; is disclosed.
摘要:
A varistor material is disclosed which has a composition consisting essentially of 93-97 mole % of ZnO and 3-7 mole % of MnO, a non-linear coefficient .alpha. of at least 20 and such a bulk density as to provide a porosity of greater than 15% but not greater than 50%, wherein the porosity is defined as follows:Porosity (%)=(1-d/d.sub.0).times.100wherein d represents the bulk density and d.sub.0 represents the theoretical density of the single phase pure ZnO. The varistor material is produced by sintering a mixture containing ZnO powder and 3-7 mole %, based on ZnO+MnO, of a maganese compound at a temperature of 1100.degree.-1350.degree. C. under a condition so that the resulting sintered body has the above porosity.
摘要:
A laser beam absorbing resin composition is disclosed which includes 100 parts by weight of a resin, and 1-100 parts by weight of composite particles having an average particle diameter of 0.1-50 .mu.m and each including a particulate, laser beam absorbing inorganic substance, and a colorant physically bonded directly to the inorganic substance and capable of discoloring upon being heated at a temperature of 250.degree. C. or more, the weight ratio of the colorant to the inorganic substance being in the range of 1:99 to 50:50. By irradiating a shaped, hardened body of the above composition with a laser beam, the colorant is thermally decomposed, so that the color of the irradiated surface is changed and becomes discriminative from that of non-irradiated surface.
摘要:
A laser beam absorbing resin composition is disclosed which includes 100 parts by weight of a resin, and 1-100 parts by weight of composite particles having an average particle diameter of 0.1-50 .mu.m and each including a particulate, laser beam absorbing inorganic substance, and a colorant physically bonded directly to the inorganic substance and capable of discoloring upon being heated at a temperature of 250.degree. C. or more, the weight ratio of the colorant to the inorganic substance being in the range of 1:99 to 50:50. By irradiating a shaped, hardened body of the above composition with a laser beam, the colorant is thermally decomposed, so that the color of the irradiated surface is changed and becomes discriminative from that of non-irradiated surface.
摘要:
A pixel circuit includes a first power line that supplies a first power, a single control line, an emission control variable resistance element having one end connected to the first power line and the other end connected to the control line, a second power line that supplies a second power, a light-emitting element that has one end connected to the control line and the other end connected to the second power line and emits light in accordance with data written to the emission control variable resistance element, and a parallel connection variable resistance element having one end connected to the control line and the other end connected to the second power line so that it is parallel with the light-emitting element.
摘要:
[Problems] To perform predetermined processing such as annealing and coating application of a semiconductor material with high accuracy on a number of semiconductor formation areas formed over a wide region on a surface of a substrate having elasticity such as a plastic substrate even when the substrate expands and contracts.[Solving Means] A semiconductor substrate manufacture apparatus includes: a tracking device (33) having a light-emitting portion (34) which applies light to a substrate surface during tracking, a light-receiving portion (35) which receives the light applied by the light-emitting portion (34) and reflected by the substrate surface, and a position detecting portion (36) which detects the positions of the semiconductor formation areas on the substrate based on the spectrum or intensity of the received light; and a semiconductor processing device for performing the predetermined processing on each of the semiconductor formation areas based on position information from the tracking device (33). For example, an annealing light application device (37) or an inkjet nozzle (41) is used as the semiconductor processing device.
摘要:
A resist material for micro-fabrication comprising a polymer in which the polymer backbone has thereon a moiety of the formula (I) ##STR1## wherein R represents a hydrogen atom, an alkyl group, an alkenyl group or an aryl group or an aralkyl group, the resist material being curable by electromagnetic radiation such as electron beams, X-rays or deep ultraviolet light with a wave length of less than about 3000A and being particularly suitable as a micro-fabrication resist material.
摘要:
An apparatus for driving a display panel having drive lines and capacitive light emitting elements. The apparatus sequentially selects one scanning line from the scanning lines every scanning period of input video data including a gradation level to specify a drive line corresponding to at least one capacitive light emitting element driven to emit light on the one scanning line in accordance with the input video data, generates a driving signal having a pulse width in accordance with the gradation level every scanning period, and applies the one capacitive light emitting element with a voltage equal to or higher than a light emission threshold voltage in a forward direction for a duration in which the driving signal is generated, through the one scanning line and the specified drive line, and applies the specified drive line with a predetermined potential in response to elimination of the driving signal to decrease the voltage applied to the one capacitive light emitting element in the forward direction to a voltage lower than the light emission threshold voltage.