发明授权
- 专利标题： Method and apparatus for heat treating
- 专利标题（中）： 热处理方法和装置
-
申请号： US799931申请日： 1991-11-29
-
公开(公告)号： US5297956A公开(公告)日： 1994-03-29
- 发明人: Kikuo Yamabe , Keitaro Imai , Katsuya Okumura , Ken Nakao , Seikou Ueno
- 申请人： Kikuo Yamabe , Keitaro Imai , Katsuya Okumura , Ken Nakao , Seikou Ueno
- 申请人地址： JPX Kawasaki JPX Kanagawa
- 专利权人： Kabushiki Kaisha Toshiba,Tokyo Electron Sagami Limited
- 当前专利权人： Kabushiki Kaisha Toshiba,Tokyo Electron Sagami Limited
- 当前专利权人地址： JPX Kawasaki JPX Kanagawa
- 优先权： JPX2-340622 19901130; JPX3-292725 19911108
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; C30B31/12 ; C30B31/14 ; H01L21/22 ; H01L21/31 ; H01L21/673 ; H01L21/683 ; F23D5/00
摘要：
A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.
公开/授权文献
信息查询
IPC分类:
