发明授权
- 专利标题: Chemical vapor deposition from single organometallic precursors
- 专利标题(中): 来自单一有机金属前体的化学气相沉积
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申请号: US903256申请日: 1992-06-23
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公开(公告)号: US5300320A公开(公告)日: 1994-04-05
- 发明人: Andrew R. Barron , Michael B. Power , Andrew N. MacInnes , Aloysius F. Hepp , Phillip P. Jenkins
- 申请人: Andrew R. Barron , Michael B. Power , Andrew N. MacInnes , Aloysius F. Hepp , Phillip P. Jenkins
- 申请人地址: MA Cambridge
- 专利权人: President and Fellows of Harvard College
- 当前专利权人: President and Fellows of Harvard College
- 当前专利权人地址: MA Cambridge
- 主分类号: C23C16/30
- IPC分类号: C23C16/30 ; H01L21/20 ; H01L21/285 ; H01L21/314 ; C23C16/00
摘要:
A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate. Electronic or electro-optical circuits or circuit elements can be formed which include passivating/buffer films formed by the method of the invention.
公开/授权文献
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