发明授权
- 专利标题: Semiconductor wafer with improved step coverage along scribe lines
- 专利标题(中): 半导体晶片具有沿划线改善的台阶覆盖
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申请号: US904613申请日: 1992-06-26
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公开(公告)号: US5300816A公开(公告)日: 1994-04-05
- 发明人: Jeungwoo Lee , Myoungseob Shim , Heonjong Shin
- 申请人: Jeungwoo Lee , Myoungseob Shim , Heonjong Shin
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX91-10829 19910627
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/304 ; H01L21/312 ; H01L21/78 ; H01L27/00 ; H01L23/48 ; H01L29/44 ; H01L29/46
摘要:
A semiconductor wafer partitioned into a multiplicity of chip areas defined by a grid-like array of scribe lines inscribed into the surface of the wafer, wherein each scribe line is longitudinally bounded by respective field oxide layers formed in the surface of the wafer, to thereby define a scribe line region between adjacent chip areas. The wafer includes a multiplicity of integrated circuits formed in a corresponding multiplicity of the chip areas, respectively, each of the integrated circuits including a patterned, multilayer structure having a peripheral edge portion which extends into a respective one of the scribe line regions, wherein the peripheral edge portion of each multilayer structure has a multi-tiered cross-sectional profile, thereby ensuring adequate step coverage of the photoresist film which is applied to the individual layers of the multilayer structures when they are patterned during the wafer fabrication process.
公开/授权文献
- US5985157A Filter device 公开/授权日:1999-11-16
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