发明授权
- 专利标题： Method of manufacturing a bump electrode
- 专利标题（中）： 凸块电极的制造方法
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申请号： US905683申请日： 1992-06-29
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公开(公告)号： US5310699A公开(公告)日： 1994-05-10
- 发明人: Yasunori Chikawa , Shigeyuki Sasaki , Katsunobu Mori , Takamichi Maeda , Masao Hayakawa
- 申请人： Yasunori Chikawa , Shigeyuki Sasaki , Katsunobu Mori , Takamichi Maeda , Masao Hayakawa
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX59-181291 19840828
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/485 ; H01L23/532 ; H01L21/28 ; H01L21/447 ; H01L21/92
摘要：
A method of manufacturing a semiconductor device with a bump-electrode of gold crystal is disclosed. The method includes providing a semiconductor substrate, an insulative layer, an electrode section, passivation layer on the edge portion of the electrode section, a multi-layer film, and a bump electrode of gold crystal. The method further includes heat treatment of the bump electrode to form an anticorrosive layer between the electrode section and the lower layer of the multi-layer film. Removing the unnecessary multi-layer film, the anticorrosive layer is used as a mask for etching to simplify the process of manufacturing the semiconductor device.
公开/授权文献
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