公开(公告)号：US20190099829A1

公开(公告)日：2019-04-04

申请号：US16207007

申请日：2018-11-30

申请人： Takahiko KANAI ,  Munehisa HATTA ,  Fumiaki IKUTA ,  Kazuhiro KAWASAKI ,  Eizaburo NAKANISHI ,  Tsuyoshi YOSHIDA ,  Kotobu NAGAI ,  Masao HAYAKAWA ,  Takehiko ITAGAKI

发明人： Takahiko KANAI ,  Munehisa HATTA ,  Fumiaki IKUTA ,  Kazuhiro KAWASAKI ,  Eizaburo NAKANISHI ,  Tsuyoshi YOSHIDA ,  Kotobu NAGAI ,  Masao HAYAKAWA ,  Takehiko ITAGAKI

IPC分类号： B23K11/11 ,  B23K11/24 ,  B23K11/26 ,  B23K11/31 ,  B23K13/08 ,  B23K101/18 ,  B23K103/04

摘要： A method for spot-welding metallic materials includes: sandwiching the metallic materials with a pair of electrodes; a pre-heating step for pre-heating a region different from a given region which should be welded by applying electric power having a high frequency to the pair of electrodes; and a welding step for spot-welding a given region of the metallic materials by applying electric power for welding to the pair of electrodes. The heating time in the pre-heating step and that in the welding step are independently controlled.

公开(公告)号：US09498840B2

公开(公告)日：2016-11-22

申请号：US13388239

申请日：2010-07-30

申请人： Takahiko Kanai ,  Munehisa Hatta ,  Fumiaki Ikuta ,  Kazuhiro Kawasaki ,  Eizaburou Nakanishi ,  Masayuki Miyake ,  Kotobu Nagai ,  Masao Hayakawa ,  Takehiko Itagaki

发明人： Takahiko Kanai ,  Munehisa Hatta ,  Fumiaki Ikuta ,  Kazuhiro Kawasaki ,  Eizaburou Nakanishi ,  Masayuki Miyake ,  Kotobu Nagai ,  Masao Hayakawa ,  Takehiko Itagaki

IPC分类号： B23K9/28 ,  B23K11/11 ,  B23K11/24 ,  B23K11/26 ,  B23K11/31 ,  C22C38/00

CPC分类号： B23K11/115 ,  B23K11/24 ,  B23K11/26 ,  B23K11/312 ,  B23K2101/006 ,  B23K2101/18 ,  B23K2103/04 ,  C22C38/00 ,  Y10T428/12965

摘要： A welding structural part 1 is manufactured by overlapping the surfaces of steel sheets 2, and forming a weld zone by spot welding. The weld zone 3 includes: a weld nugget 4; and a heat affected zone 5 surrounding the weld nugget 4, wherein the hardness in the weld zone increases along an exterior region 6 of the heat affected zone 5 toward the heat affected zone 5, and then decreases along the heat affected zone 5 toward the central region of the weld nugget 4. In the boundary region between the weld nugget 4 and the heat affected zone 5, the weld nugget 4 may have a convex portion 4A bulging into the heat affected zone 5 along the overlapped portion. The steel sheets 2 contain carbon in 0.15 mass % or more.

摘要翻译： 通过重叠钢板2的表面，通过点焊形成焊接区域来制造焊接结构体1。 焊接区3包括：焊点4; 以及围绕焊点4的热影响区域5，其中焊接区域中的硬度沿着热影响区域5的外部区域6朝向热影响区域5增加，然后沿热影响区域5朝向中心 在焊接熔核4与热影响区5之间的边界区域中，焊点4可以具有沿重叠部分向热影响区5内凸出的凸部4A。 钢板2含有0.15质量％以上的碳。

公开(公告)号：US20150306696A1

公开(公告)日：2015-10-29

申请号：US14738364

申请日：2015-06-12

申请人： Takahiko KANAI ,  Munehisa HATTA ,  Fumiaki IKUTA ,  Kazuhiro KAWASAKI ,  Eizaburo NAKANISHI ,  Tsuyoshi YOSHIDA ,  Kotobu NAGAI ,  Masao HAYAKAWA ,  Takehiko ITAGAKI

发明人： Takahiko KANAI ,  Munehisa HATTA ,  Fumiaki IKUTA ,  Kazuhiro KAWASAKI ,  Eizaburo NAKANISHI ,  Tsuyoshi YOSHIDA ,  Kotobu NAGAI ,  Masao HAYAKAWA ,  Takehiko ITAGAKI

IPC分类号： B23K11/11 ,  B23K13/08 ,  B23K11/24

CPC分类号： B23K11/115 ,  B23K11/24 ,  B23K11/241 ,  B23K11/26 ,  B23K11/312 ,  B23K13/08 ,  B23K2101/18 ,  B23K2103/04

摘要： A welding equipment for metallic materials capable of performing heat treatment such as tempering based on partial heating in spot welding is provided. The welding equipment sandwiches metallic materials with a pair of electrodes, and heats different regions of the metallic materials by energization, with the pair of electrodes maintained at the same position with respect to the metallic materials. The welding equipment includes a first heating means connected to the pair of electrodes for heating and welding the internal region of the circle defined by projecting the cross-sectional area of the axis of the electrodes on the metallic materials by applying power having a low first frequency, a second heating means for heating a ring-shaped region along the circle by applying power having a second frequency that is higher than the first frequency, and an energization control unit for independently controlling the first and the second heating means.

摘要翻译： 提供了一种能够进行热处理的金属材料的焊接设备，例如在点焊中基于部分加热的回火。 焊接设备用金属材料夹着一对电极，通过激励加热金属材料的不同区域，同时电极对相对于金属材料保持在相同的位置。 焊接设备包括连接到一对电极的第一加热装置，用于加热和焊接通过施加具有低的第一频率的功率而将电极的轴线的横截面积投影在金属材料上的圆的内部区域 第二加热装置，用于通过施加具有高于第一频率的第二频率的功率沿着圆加热环形区域;以及通电控制单元，用于独立地控制第一和第二加热装置。

公开(公告)号：US4536786A

公开(公告)日：1985-08-20

申请号：US39820

申请日：1979-05-17

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

IPC分类号： H01L21/603 ,  H01L21/60 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L24/50 ,  H01L24/79 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/15787

摘要： Raised contacts included within a semiconductor chip are bonded to respective external leads through the use of a bonding tool. The raised contacts and/or the external leads are varied in a fashion depending on their locations on a semiconductor substrate so as to compensate for lack of uniformity of the surface temperature of the bonding tool.

摘要翻译： 包含在半导体芯片内的升高的触点通过使用接合工具被接合到相应的外部引线。 升高的触点和/或外部引线以取决于它们在半导体衬底上的位置的方式变化，以便补偿焊接工具的表面温度的不均匀性。

公开(公告)号：US4300153A

公开(公告)日：1981-11-10

申请号：US190744

申请日：1980-09-25

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/28 ,  H01L23/02 ,  H01L39/02

CPC分类号： H01L23/3121 ,  H01L21/56 ,  H01L2224/16

摘要： Electrodes are formed on one major surface of a semiconductor chip and electrically connected to lead electrodes carried by a support substrate. A cover plate is fixed to the opposing major surface of the semiconductor chip to determine one major surface of semiconductor device. Remaining surfaces of the semiconductor chip are encapsulated by a resin mold. The cover plate comprises a flexible glass cloth impregnated with half cured epoxy resin.

摘要翻译： 电极形成在半导体芯片的一个主表面上并电连接到由支撑衬底承载的引线电极。 盖板固定到半导体芯片的相对主表面以确定半导体器件的一个主表面。 半导体芯片的剩余表面被树脂模具封装。 盖板包括浸渍有半固化环氧树脂的柔性玻璃布。

公开(公告)号：US08932416B2

公开(公告)日：2015-01-13

申请号：US13375156

申请日：2010-05-26

申请人： Eizaburou Nakanishi ,  Masayuki Miyake ,  Kotobu Nagai ,  Masao Hayakawa ,  Takehito Itagaki ,  Takahiko Kanai ,  Munehisa Hatta ,  Kazuhiro Kawasaki

发明人： Eizaburou Nakanishi ,  Masayuki Miyake ,  Kotobu Nagai ,  Masao Hayakawa ,  Takehito Itagaki ,  Takahiko Kanai ,  Munehisa Hatta ,  Kazuhiro Kawasaki

IPC分类号： C21D9/00 ,  B21D22/02 ,  B21D22/20 ,  B21D37/16 ,  C21D1/42 ,  C22C38/18 ,  C22C38/22

CPC分类号： B21D22/02 ,  B21D22/20 ,  B21D37/16 ,  C21D1/42 ,  C21D1/673 ,  C21D9/00 ,  C21D2211/001 ,  C21D2211/004 ,  C21D2211/008 ,  C22C38/18 ,  C22C38/22 ,  Y02P10/253

摘要： A high-strength die-quenched part 1 is formed by heating a high-strength steel sheet 11 up to an austenite region, hot stamping and cooling inside a mold, and its microstructure has the martensite wherein carbide particles 2 are finely dispersed over an entire region including prior-austenite grain boundaries. It is desirable that the prior-austenite grain size in the microstructure of the high-strength steel sheet, which is a base material, be 10 μm or smaller. The high-strength die-quenched part has high-strength and high-ductility thanks to its martensite.

摘要翻译： 通过将高强度钢板11加热至奥氏体区域，在模具内部进行热冲压和冷却来形成高强度的模具淬火部件1，其微结构具有马氏体，其中碳化物粒子2在整个中精细分散 区域包括先前的奥氏体晶界。 优选的是，作为基材的高强度钢板的微观结构中的以前的奥氏体晶粒尺寸为10μm以下。 高强度模具淬火部分由于其马氏体而具有高强度和高延展性。

公开(公告)号：US20120129006A1

公开(公告)日：2012-05-24

申请号：US13388239

申请日：2010-07-30

申请人： Takahiko Kanai ,  Munehisa Hatta ,  Fumiaki Ikuta ,  Kazuhiro Kawasaki ,  Eizaburou Nakanishi ,  Masayuki Miyake ,  Kotobu Nagai ,  Masao Hayakawa ,  Takehiko Itagaki

发明人： Takahiko Kanai ,  Munehisa Hatta ,  Fumiaki Ikuta ,  Kazuhiro Kawasaki ,  Eizaburou Nakanishi ,  Masayuki Miyake ,  Kotobu Nagai ,  Masao Hayakawa ,  Takehiko Itagaki

IPC分类号： B32B15/01 ,  B23K11/11

CPC分类号： B23K11/115 ,  B23K11/24 ,  B23K11/26 ,  B23K11/312 ,  B23K2101/006 ,  B23K2101/18 ,  B23K2103/04 ,  C22C38/00 ,  Y10T428/12965

摘要： A welding structural part 1 is manufactured by overlapping the surfaces of steel sheets 2, and forming a weld zone by spot welding. The weld zone 3 includes: a weld nugget 4; and a heat affected zone 5 surrounding the weld nugget 4, wherein the hardness in the weld zone increases along an exterior region 6 of the heat affected zone 5 toward the heat affected zone 5, and then decreases along the heat affected zone 5 toward the central region of the weld nugget 4. In the boundary region between the weld nugget 4 and the heat affected zone 5, the weld nugget 4 may have a convex portion 4A bulging into the heat affected zone 5 along the overlapped portion. The steel sheets 2 contain carbon in 0.15 mass % or more.

摘要翻译： 通过重叠钢板2的表面，通过点焊形成焊接区域来制造焊接结构体1。 焊接区3包括：焊点4; 以及围绕焊点4的热影响区域5，其中焊接区域中的硬度沿着热影响区域5的外部区域6朝向热影响区域5增加，然后沿热影响区域5朝向中心 在焊接熔核4与热影响区5之间的边界区域中，焊点4可以具有沿重叠部分向热影响区5内凸出的凸部4A。 钢板2含有0.15质量％以上的碳。

公开(公告)号：US5310699A

公开(公告)日：1994-05-10

申请号：US905683

申请日：1992-06-29

申请人： Yasunori Chikawa ,  Shigeyuki Sasaki ,  Katsunobu Mori ,  Takamichi Maeda ,  Masao Hayakawa

发明人： Yasunori Chikawa ,  Shigeyuki Sasaki ,  Katsunobu Mori ,  Takamichi Maeda ,  Masao Hayakawa

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L21/28 ,  H01L21/447 ,  H01L21/92

CPC分类号： H01L24/11 ,  H01L23/53242 ,  H01L23/53252 ,  H01L24/13 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941

摘要： A method of manufacturing a semiconductor device with a bump-electrode of gold crystal is disclosed. The method includes providing a semiconductor substrate, an insulative layer, an electrode section, passivation layer on the edge portion of the electrode section, a multi-layer film, and a bump electrode of gold crystal. The method further includes heat treatment of the bump electrode to form an anticorrosive layer between the electrode section and the lower layer of the multi-layer film. Removing the unnecessary multi-layer film, the anticorrosive layer is used as a mask for etching to simplify the process of manufacturing the semiconductor device.

摘要翻译： 公开了一种制造具有金晶体凸块电极的半导体器件的方法。 该方法包括在电极部分的边缘部分上提供半导体衬底，绝缘层，电极部分，钝化层，多层膜和金晶体的凸块电极。 该方法还包括对凸块电极进行热处理，以在多层膜的电极部分和下层之间形成防腐蚀层。 为了简化半导体器件的制造工序，除去不需要的多层膜，将防腐蚀层用作蚀刻掩模。

公开(公告)号：US4151543A

公开(公告)日：1979-04-24

申请号：US786841

申请日：1977-04-12

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

IPC分类号： H03H9/02 ,  H01L21/60 ,  H01L23/14 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L24/81 ,  H01L23/145 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/18301

摘要： A semiconductor device comprises an insulating substrate such as a film carrier having wiring patterns formed thereon, lead electrodes connected to the wiring patterns, and a semiconductor chip bonded to the lead electrodes. The surface of the lead electrodes, to which the semiconductor chip is bonded, is smooth as compared with that of the wiring patterns, thereby ensuring accurate operation of the semiconductor device.

摘要翻译： 半导体器件包括绝缘基板，例如其上形成有布线图案的薄膜载体，连接到布线图案的引线电极和接合到引线电极的半导体芯片。 与布线图形相比，半导体芯片接合的引线电极的表面平滑，从而确保半导体器件的精确操作。

公开(公告)号：US4926239A

公开(公告)日：1990-05-15

申请号：US390448

申请日：1989-08-02

申请人： Kazuya Fujita ,  Takamichi Maeda ,  Masao Hayakawa

发明人： Kazuya Fujita ,  Takamichi Maeda ,  Masao Hayakawa

IPC分类号： H01L23/29

CPC分类号： H01L23/293 ,  H01L24/50 ,  H01L2924/13091 ,  H01L2924/14 ,  Y10T428/239

摘要： A plastic encapsulant for a semiconductor chip comprises an epoxy resin, an organosilicon compound, a hardener, a pigment, and an organic solvent. The epoxy resin is an epichlorohydrin-bisphenol A type epoxy resin, and the organosilicon compound is an organosilicon compound with a methoxy group, preferably, three methoxy groups. The hardener is a resol type phenol resin hardener. The organic solvent is a mixture of ketones, alcohols, and aromatic hydrocarbons.

摘要翻译： 用于半导体芯片的塑料密封剂包括环氧树脂，有机硅化合物，硬化剂，颜料和有机溶剂。 环氧树脂是表氯醇 - 双酚A型环氧树脂，有机硅化合物是具有甲氧基的有机硅化合物，优选三个甲氧基。 固化剂是甲阶型酚醛树脂固化剂。 有机溶剂是酮，醇和芳烃的混合物。