发明授权
- 专利标题: Aluminum nitride substrate and method for producing same
- 专利标题(中): 氮化铝基板及其制造方法
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申请号: US104564申请日: 1993-08-11
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公开(公告)号: US5312698A公开(公告)日: 1994-05-17
- 发明人: Hideki Sato , Yasuyuki Sugiura
- 申请人: Hideki Sato , Yasuyuki Sugiura
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX63-229400 19880913
- 主分类号: C04B41/00
- IPC分类号: C04B41/00 ; C04B41/51 ; C04B41/80 ; C04B41/88 ; H01L23/15 ; H05K1/03 ; H05K3/00
摘要:
This invention is directed to a laser-subdivided aluminum nitride substrate wherein a resolidified layer formed at the laser score lines is constituted by one or more types of material selected from the group consisting of oxides, nitrides and oxynitrides of aluminum and of additives of said aluminum nitride substrate, and to a method of producing an aluminum nitride substrate wherein, subsequent to laser scoring the substrate, a heat treatment step at about 1000.degree. C. to 1800.degree. C. is carried out prior to the step of metallizing. This simple method provides an aluminum nitride substrate having a prescribed withstand-voltage characteristic.
公开/授权文献
- US6063271A Portable waste water treatment plant 公开/授权日:2000-05-16
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