发明授权
US5315140A Semiconductor device having a polysilicon capacitor with large grain
diameter
失效
具有晶粒直径大的多晶硅电容器的半导体装置
- 专利标题： Semiconductor device having a polysilicon capacitor with large grain diameter
- 专利标题（中）： 具有晶粒直径大的多晶硅电容器的半导体装置
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申请号： US8020申请日： 1993-01-22
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公开(公告)号： US5315140A公开(公告)日： 1994-05-24
- 发明人: Kazuyuki Sugahara , Hideaki Arima
- 申请人： Kazuyuki Sugahara , Hideaki Arima
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-106759 19920424
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/822 ; H01L21/8242 ; H01L27/10 ; H01L27/108 ; H01L29/16 ; H01L29/94
摘要：
A semiconductor device includes a capacitor with an insulator having an improved durability. In the semiconductor device, a capacitor lower electrode 11 of the cylindrical capacitor includes a standing wall portion 11b which is formed of a polysilicon layer having a large crystal grain diameter (1000.ANG.-10000.ANG.).
公开/授权文献
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