发明授权
- 专利标题： High-frequency power amplifier device and high-frequency module including the same
- 专利标题（中）： 高频功率放大器和高频模块包括相同
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申请号： US988892申请日： 1992-12-10
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公开(公告)号： US5325072A公开(公告)日： 1994-06-28
- 发明人: Iwamichi Kohjiro , Masahito Numanami
- 申请人： Iwamichi Kohjiro , Masahito Numanami
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-334651 19911218
- 主分类号： H01P1/00
- IPC分类号： H01P1/00 ; H01L23/66 ; H01P3/08 ; H03F3/60 ; H05K1/02 ; H05K1/14 ; H01L23/12
摘要：
A high-frequency power amplifier device is provided in which the number of ground lines on the electronic parts mounting face of a strip line substrate having microstrip lines is reduced or eliminated. Specifically, a metallic cover extending in parallel with the mounting face of the strip line substrate is grounded, and the microstrip lines between this cover and the strip line substrate are electrically connected by connecting means such as capacitors and/or conductors.
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