发明授权
- 专利标题： Semiconductor device having a memory cell
- 专利标题（中）： 具有存储单元的半导体器件
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申请号： US989629申请日： 1992-12-14
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公开(公告)号： US5329481A公开(公告)日： 1994-07-12
- 发明人: Evert Seevinck , Maarten Vertregt , Godefridus A. M. Hurkx
- 申请人： Evert Seevinck , Maarten Vertregt , Godefridus A. M. Hurkx
- 申请人地址： NY New York
- 专利权人： U.S. Philips Corporation
- 当前专利权人： U.S. Philips Corporation
- 当前专利权人地址： NY New York
- 优先权： EPX91203305.7 19911216
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; G11C11/34 ; H01L21/8229 ; H01L27/102 ; H01L27/115
摘要：
A semiconductor device with at least one programmable memory cell which includes a bipolar transistor (T.sub.1) with an emitter (11) and a collector (12) of a first conductivity type and a base (10) of a second, opposite conductivity type. The emitter (11) and collector (12) are coupled to a first supply line (100) and a second supply line (200), respectively. The base (10) is coupled to writing means (WRITE) through a control transistor (T.sub.2). Reading means (READ) are included in a current path (I) which extends between the first supply line (100) and the second supply line (200) and which includes a current path between the emitter (11) and collector (12). In a preferred embodiment, the collector (12) is in addition coupled to the second supply line (200) via a switchable load (T.sub.5).
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