发明授权
- 专利标题： Semiconductor memory device including gate electrode sandwiching a channel region
- 专利标题（中）： 半导体存储器件包括夹着沟道区的栅电极
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申请号： US870258申请日： 1992-04-17
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公开(公告)号： US5331197A公开(公告)日： 1994-07-19
- 发明人: Mamoru Miyawaki , Akira Ishizaki , Genzo Momma , Hiroshi Yuzurihara , Tetsunobu Kohchi
- 申请人： Mamoru Miyawaki , Akira Ishizaki , Genzo Momma , Hiroshi Yuzurihara , Tetsunobu Kohchi
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-092294 19910423; JPX3-092295 19910423; JPX3-097256 19910426
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L27/102 ; H01L27/108 ; H01L27/115 ; H01L29/423 ; H01L29/786 ; H01L29/78
摘要：
A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.
公开/授权文献
- US5733227A Step exerciser 公开/授权日：1998-03-31