公开(公告)号：US09000343B2

公开(公告)日：2015-04-07

申请号：US13807002

申请日：2011-06-23

申请人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

发明人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

IPC分类号： H01L27/146 ,  H01L31/00

CPC分类号： H01L27/14636 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469

摘要： The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.

摘要翻译： 固态摄像装置技术领域本发明涉及具有多个光电转换单元的第一基板和具有多个读出电路的第二基板的固体摄像装置。 第一基板设置有彼此电分离的多个第一导电图案，并且第二基板设置有彼此电分离的多个第二导电图案。 第一导电图案各自包括沿第一方向延伸的第一部分图案。 第二导电图案各自包括沿与第一方向不同的第二方向延伸的部分图案。 第一部分图案具有在第一方向上比第二方向上的长度长的长度。

公开(公告)号：US20120199725A1

公开(公告)日：2012-08-09

申请号：US13364041

申请日：2012-02-01

申请人： Mineo Shimotsusa ,  Taro Kato ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Takeshi Ichikawa ,  Genzo Momma

发明人： Mineo Shimotsusa ,  Taro Kato ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Takeshi Ichikawa ,  Genzo Momma

IPC分类号： H01L27/146 ,  G01J1/42

CPC分类号： H01L27/14629 ,  H01L27/14627

摘要： A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion.

摘要翻译： 聚光部件将布置在开口部内的光路部件的上部区域中入射到聚光部件的与绝缘膜的开口部对应的第一区域的光聚焦，该绝缘膜具有 上表面从开口部分延伸，并且光路部件在与光电转换部分的光接收面对应的区域中具有下表面。

公开(公告)号：US5595920A

公开(公告)日：1997-01-21

申请号：US417831

申请日：1995-04-06

申请人： Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Hiroshi Yuzurihara ,  Tetsunobu Kohchi

发明人： Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Hiroshi Yuzurihara ,  Tetsunobu Kohchi

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L27/102 ,  H01L27/108 ,  H01L27/115 ,  H01L29/423 ,  H01L29/786 ,  H01L21/265

CPC分类号： H01L29/7851 ,  H01L21/823475 ,  H01L27/1026 ,  H01L27/10805 ,  H01L27/115 ,  H01L29/66795

摘要： A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.

摘要翻译： 一种半导体存储器件，包括：绝缘栅晶体管，具有沿着基板的主表面设置的多个主电极区域和设置在所述多个主电极区域之间的沟道区域;以及栅极电极，设置在所述沟道区域上， 绝缘体之间，所述栅电极具有至少两个相对的部分; 以及设置在所述主电极区域之一上的电可破坏的存储元件。

公开(公告)号：US20120200751A1

公开(公告)日：2012-08-09

申请号：US13365146

申请日：2012-02-02

申请人： Taro Kato ,  Mineo Shimotsusa ,  Hiroaki Sano ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Genzo Momma

发明人： Taro Kato ,  Mineo Shimotsusa ,  Hiroaki Sano ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Genzo Momma

IPC分类号： H04N5/335

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1463

摘要： A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.

摘要翻译： 光电转换装置包括具有光电转换部分的半导体衬底。 绝缘体设置在半导体衬底上。 绝缘体具有与光电转换部对应的孔。 波导构件设置在孔中。 在距离半导体衬底更远的波导构件的一侧设置有层内透镜。 第一中间构件设置在波导构件和内层透镜之间。 第一中间构件具有比层内透镜低的折射率。

公开(公告)号：US07270759B2

公开(公告)日：2007-09-18

申请号：US11272869

申请日：2005-11-15

申请人： Yukihiro Hayakawa ,  Genzo Momma ,  Masato Kamiichi

发明人： Yukihiro Hayakawa ,  Genzo Momma ,  Masato Kamiichi

IPC分类号： B41J2/16

CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  H01L23/481 ,  H01L29/0657 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

摘要翻译： 通过生产步骤减少和可靠性提高，构造了在硅等的基板中具有通孔的结构。 至少在通孔的边缘附近的基板的一部分上形成与氧化硅膜的上表面接触的氮化硅膜，从而提高氮化硅膜的台阶覆盖。 氧化硅膜和氮化硅膜在从基板的背面进行蚀刻形成通孔期间用作膜。

公开(公告)号：US5567962A

公开(公告)日：1996-10-22

申请号：US263147

申请日：1994-06-21

申请人： Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Hiroshi Yuzurihara ,  Tetsunobu Kohchi

发明人： Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Hiroshi Yuzurihara ,  Tetsunobu Kohchi

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L27/102 ,  H01L27/108 ,  H01L27/115 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78

CPC分类号： H01L29/7851 ,  H01L21/823475 ,  H01L27/1026 ,  H01L27/10805 ,  H01L27/115 ,  H01L29/66795

摘要： A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.

摘要翻译： 一种半导体存储器件，包括：绝缘栅晶体管，具有沿着基板的主表面设置的多个主电极区域和设置在所述多个主电极区域之间的沟道区域;以及栅极电极，设置在所述沟道区域上， 绝缘体之间，所述栅电极具有至少两个相对的部分; 以及设置在所述主电极区域之一上的电可破坏的存储元件。

公开(公告)号：US08817144B2

公开(公告)日：2014-08-26

申请号：US13365146

申请日：2012-02-02

申请人： Taro Kato ,  Mineo Shimotsusa ,  Hiroaki Sano ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Genzo Momma

发明人： Taro Kato ,  Mineo Shimotsusa ,  Hiroaki Sano ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Genzo Momma

IPC分类号： H01L21/00

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1463

摘要： A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.

摘要翻译： 光电转换装置包括具有光电转换部分的半导体衬底。 绝缘体设置在半导体衬底上。 绝缘体具有与光电转换部对应的孔。 波导构件设置在孔中。 在距离半导体衬底更远的波导构件的一侧设置有层内透镜。 第一中间构件设置在波导构件和内层透镜之间。 第一中间构件具有比层内透镜低的折射率。

公开(公告)号：US20130092822A1

公开(公告)日：2013-04-18

申请号：US13807002

申请日：2011-06-23

申请人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

发明人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469

摘要： The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.

公开(公告)号：US5561317A

公开(公告)日：1996-10-01

申请号：US478447

申请日：1995-06-07

申请人： Genzo Momma ,  Hiroshi Yuzurihara

发明人： Genzo Momma ,  Hiroshi Yuzurihara

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L23/544

CPC分类号： G03F7/70433 ,  G03F7/2002 ,  G03F7/70475 ,  H01L21/0274 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing semiconductor devices in which a desired pattern having an area size larger than the field size that can be obtained in one exposure process step of an exposure device is formed. The manufacturing method includes the steps of dividing the desired pattern into a plurality of portions, and conducting exposure on the dividing patterns in a joined fashion.

摘要翻译： 公开了一种制造半导体器件的方法，其中形成了具有比在曝光装置的一个曝光处理步骤中可获得的场尺寸大的面积尺寸的期望图案。 该制造方法包括以下步骤：将期望的图案分成多个部分，并以连接的方式在分割图案上进行曝光。

公开(公告)号：US5331197A

公开(公告)日：1994-07-19

申请号：US870258

申请日：1992-04-17

申请人： Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Hiroshi Yuzurihara ,  Tetsunobu Kohchi

发明人： Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Hiroshi Yuzurihara ,  Tetsunobu Kohchi

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L27/102 ,  H01L27/108 ,  H01L27/115 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78

CPC分类号： H01L29/7851 ,  H01L21/823475 ,  H01L27/1026 ,  H01L27/10805 ,  H01L27/115 ,  H01L29/66795

摘要： A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.

摘要翻译： 一种半导体存储器件，包括：绝缘栅晶体管，具有沿着基板的主表面设置的多个主电极区域和设置在所述多个主电极区域之间的沟道区域;以及栅极电极，设置在所述沟道区域上， 绝缘体之间，所述栅电极具有至少两个相对的部分; 以及设置在所述主电极区域之一上的电可破坏的存储元件。