Invention Grant
- Patent Title: High voltage MOSFET switching circuit
- Patent Title (中): 高压MOSFET开关电路
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Application No.: US863914Application Date: 1992-04-06
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Publication No.: US5332938APublication Date: 1994-07-26
- Inventor: Thomas E. McEwan
- Applicant: Thomas E. McEwan
- Applicant Address: CA Oakland
- Assignee: Regents of the University of California
- Current Assignee: Regents of the University of California
- Current Assignee Address: CA Oakland
- Main IPC: H03K17/0412
- IPC: H03K17/0412 ; H03K17/06 ; H03K17/16 ; H03K17/687 ; H03K17/56
Abstract:
The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.
Public/Granted literature
- US5884129A Electrostatic-image developer and image forming process Public/Granted day:1999-03-16
Information query
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