发明授权
US5336627A Method for the manufacture of a transistor having differentiated access
regions
失效
用于制造具有差分存取区域的晶体管的方法
- 专利标题: Method for the manufacture of a transistor having differentiated access regions
- 专利标题(中): 用于制造具有差分存取区域的晶体管的方法
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申请号: US4088申请日: 1993-01-13
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公开(公告)号: US5336627A公开(公告)日: 1994-08-09
- 发明人: Thierry Pacou , Patrice Arsene-Henry , Tung N. Pham , Yann Genuist
- 申请人: Thierry Pacou , Patrice Arsene-Henry , Tung N. Pham , Yann Genuist
- 申请人地址: FRX Puteaux FRX Puteaux
- 专利权人: Thomson-CSF Semiconducteurs Specifiques,Thomson-CSF Semiconducteurs Specifiques
- 当前专利权人: Thomson-CSF Semiconducteurs Specifiques,Thomson-CSF Semiconducteurs Specifiques
- 当前专利权人地址: FRX Puteaux FRX Puteaux
- 优先权: FRX9200748 19920124
- 主分类号: H01L29/812
- IPC分类号: H01L29/812 ; H01L21/266 ; H01L21/336 ; H01L21/338
摘要:
The disclosure relates to the making of the source and drain access regions of a field-effect transistor, these two regions being differentiated. The control region is defined by means of a three-layer mask of metal, resin and metal. A resin mask protects the drain access region, thus enabling the implantation of the source access region. After the dissolving of the resins, the drain access region is implanted.