发明授权
- 专利标题: Semiconductor laser with broad-area intra-cavity angled grating
- 专利标题(中): 具有广域腔内角度光栅的半导体激光器
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申请号: US97682申请日: 1993-07-27
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公开(公告)号: US5337328A公开(公告)日: 1994-08-09
- 发明人: Robert J. Lang , Kenneth M. Dzurko , Donald R. Scifres , David F. Welch
- 申请人: Robert J. Lang , Kenneth M. Dzurko , Donald R. Scifres , David F. Welch
- 申请人地址: CA San Jose
- 专利权人: SDL, Inc.
- 当前专利权人: SDL, Inc.
- 当前专利权人地址: CA San Jose
- 主分类号: H01S5/026
- IPC分类号: H01S5/026 ; H01S5/028 ; H01S5/10 ; H01S5/125 ; H01S5/187 ; H01S5/20 ; H01S5/40 ; H01S5/42 ; H01S5/50 ; H01S3/19
摘要:
A semiconductor laser includes a grating that is disposed at an angle to cavity reflectors to coherently diffract a beam of light along a path that is at least partially laterally directed within the cavity. The grating period and orientation are selected such that a specified wavelength of the light beam propagating along the path will resonate for light that impinges upon the end reflectors at normal incidence. By keeping the angle of incidence of the light beam upon the grating greater than about 45 degrees, reflectivity of the grating is maximized and the required grating period is larger thereby simplifying the fabrication of the grating.
公开/授权文献
- USD425695S Umbrella handle with torch 公开/授权日:2000-05-30
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