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公开(公告)号：US5337328A
公开(公告)日：1994-08-09
申请号：US97682
申请日：1993-07-27
IPC分类号： H01S5/026 , H01S5/028 , H01S5/10 , H01S5/125 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/42 , H01S5/50 , H01S3/19
CPC分类号： H01S5/1032 , H01S5/1071 , H01S5/20 , H01S5/423 , H01S5/026 , H01S5/028 , H01S5/1243 , H01S5/125 , H01S5/187 , H01S5/2036 , H01S5/4075 , H01S5/42 , H01S5/50
摘要： A semiconductor laser includes a grating that is disposed at an angle to cavity reflectors to coherently diffract a beam of light along a path that is at least partially laterally directed within the cavity. The grating period and orientation are selected such that a specified wavelength of the light beam propagating along the path will resonate for light that impinges upon the end reflectors at normal incidence. By keeping the angle of incidence of the light beam upon the grating greater than about 45 degrees, reflectivity of the grating is maximized and the required grating period is larger thereby simplifying the fabrication of the grating.
摘要翻译： 半导体激光器包括光栅，该光栅与空腔反射器成角度设置，以沿着至少部分横向定向在空腔内的路径相干地衍射光束。 选择光栅周期和取向，使得沿着路径传播的光束的指定波长将对于在正常入射时撞击端反射器的光共振。 通过将光束的入射角保持在大于45度的光栅上，光栅的反射率最大化，并且所需的光栅周期更大，从而简化了光栅的制造。
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公开(公告)号：US5231642A
公开(公告)日：1993-07-27
申请号：US880681
申请日：1992-05-08
申请人： Donald R. Scifres , Kenneth M. Dzurko , Robert G. Waarts , David F. Welch , Amos Hardy , Stephen O'Brien
发明人： Donald R. Scifres , Kenneth M. Dzurko , Robert G. Waarts , David F. Welch , Amos Hardy , Stephen O'Brien
IPC分类号： H01S5/026 , H01S5/028 , H01S5/10 , H01S5/125 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/42 , H01S5/50
CPC分类号： H01S5/1032 , H01S5/1071 , H01S5/20 , H01S5/423 , H01S5/026 , H01S5/028 , H01S5/1243 , H01S5/125 , H01S5/187 , H01S5/2036 , H01S5/4075 , H01S5/42 , H01S5/50
摘要： A semiconductor laser that includes at least one grating reflector with a grating period selected to diffract at a nonperpendicular angle within the plane of the laser waveguide. This allows dispersal of laser light, eliminating filamentary multimode operation of broad area lasers. In one embodiment, the grating reflector couples light between a single transverse mode waveguide portion of the optical cavity and a second, broad area, portion that is not collinear with the single mode waveguide. In another embodiment, the cavity favors a ring mode of oscillation. One or more grating reflectors form part of the feedback mechanism which forms a resonant optical cavity with noncollinear portions. Other reflectors in the feedback mechanism include facet reflectors which can be cleaved or ion milled, or semiconductor material refractive index boundaries. Laser embodiments with two or more grating reflectors can be independently tuned to provide a high rate of amplitude modulation. Spatial beam deflection and wavelength tuning are also achieved. A stable unidirectional ring laser is also described. Multiple ring laser cavities can also be coupled together by partially reflecting grating reflectors to form a laser array.
摘要翻译： 一种半导体激光器，其包括至少一个具有光栅周期的光栅反射器，所述光栅反射器被选择为在激光波导的平面内以非垂直角衍射。 这允许分散激光，消除广域激光器的丝状多模操作。 在一个实施例中，光栅反射器将光耦合在光腔的单个横模式波导部分与不与单模波导共线的第二宽区域部分之间耦合。 在另一个实施例中，空腔有利于环形振荡模式。 一个或多个光栅反射器形成反馈机构的一部分，其形成具有非共线部分的谐振光腔。 反馈机构中的其他反射器包括可以被切割或离子研磨的面反射器，或半导体材料的折射率边界。 具有两个或更多个光栅反射器的激光器实施例可以被独立地调谐以提供高的幅度调制率。 还实现了空间光束偏转和波长调谐。 还描述了稳定的单向环形激光器。 多环激光腔也可以通过部分反射光栅反射器耦合在一起形成激光阵列。
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公开(公告)号：US5715268A
公开(公告)日：1998-02-03
申请号：US724374
申请日：1996-10-01
CPC分类号： H01S5/50 , H01S5/026 , H01S5/0608 , H01S5/06256 , H01S5/1064 , H01S5/20
摘要： A travelling-wave semiconductor laser amplifier having suppressed self-oscillation is provided. When incorporated into a master oscillator power amplifier device, such a device has improved light output versus amplifier current characteristics. Also provided is a method for suppressing self-oscillation in travelling-wave semiconductor laser amplifier structures for improving the characteristics of the device into which the amplifier is incorporated.
摘要翻译： 提供抑制自振荡的行波半导体激光放大器。 当结合到主振荡器功率放大器装置中时，这种装置对于放大器电流特性具有改进的光输出。 还提供了一种用于抑制行波半导体激光放大器结构中的自振荡的方法，用于改善放大器并入其中的器件的特性。
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公开(公告)号：US5321718A
公开(公告)日：1994-06-14
申请号：US10279
申请日：1993-01-28
IPC分类号： G02F1/37 , H01S3/00 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/14 , H01S5/187 , H01S5/40 , H01S5/50 , H01S3/08 , H01S3/10
CPC分类号： H01S5/50 , G02F1/37 , H01S5/0265 , H01S5/005 , H01S5/0092 , H01S5/026 , H01S5/06256 , H01S5/1064 , H01S5/1215 , H01S5/141 , H01S5/187 , H01S5/4025 , H01S5/4031 , H01S5/4068 , H01S5/4087
摘要： A compact semiconductor laser light source providing short wavelength (ultraviolet, blue or green) coherent light by means of frequency doubling of red or infrared light from a high power diode heterostructure. The high power diode heterostructure is a MOPA device having a single mode laser oscillator followed by a multimode, preferably flared, optical power amplifier. A tunable configuration having an external rear reflector grating could also be used. A lens could be integrated with the MOPA to laterally collimate the light before it is emitted. Straight or curved, surface emitting gratings could also be incorporated. An astigmatism-correcting lens system having at least one cylindrical lens surface is disposed in the path of the output from the MOPA to provide a beam with substantially equal lateral and transverse beam width dimensions and beam divergence angles. A nonlinear optical crystal or waveguide is placed in the path of the astigmatism-free symmetrized beam to double the frequency of the light. Single pass or multipass configurations with reflectors could be used, as well as external resonator and segmented, periodically poled waveguide configurations.
摘要翻译： 一种紧凑的半导体激光光源，通过从高功率二极管异质结构的红色或红外光的倍频提供短波长（紫外线，蓝色或绿色）相干光。 高功率二极管异质结构是具有单模激光振荡器的MOPA器件，其后是多模，优选为扩展的光功率放大器。 也可以使用具有外部后反射器光栅的可调构造。 透镜可以与MOPA集成，以在发射光之前对光进行横向准直。 还可以结合直的或弯曲的表面发射光栅。 具有至少一个柱面透镜表面的散光校正透镜系统设置在来自MOPA的输出的路径中，以提供具有基本相等的横向和横向波束宽度尺寸和光束发散角的光束。 将非线性光学晶体或波导放置在无散光对称光束的路径中，将光的频率加倍。 可以使用具有反射器的单通或多通道配置，以及外部谐振器和分段的周期性极化波导配置。
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公开(公告)号：US5537432A
公开(公告)日：1996-07-16
申请号：US390121
申请日：1995-02-17
IPC分类号： H01S3/081 , H01S3/23 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/14 , H01S5/18 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/50 , H01S3/19
CPC分类号： H01S5/1014 , G02B6/12004 , G02B6/305 , H01S5/026 , H01S5/10 , H01S5/141 , H01S5/20 , H01S3/0818 , H01S3/113 , H01S5/0286 , H01S5/0625 , H01S5/06256 , H01S5/0655 , H01S5/1003 , H01S5/1064 , H01S5/1082 , H01S5/1085 , H01S5/1215 , H01S5/125 , H01S5/14 , H01S5/146 , H01S5/18 , H01S5/187 , H01S5/2036 , H01S5/2063 , H01S5/4025 , H01S5/4062 , H01S5/4087 , H01S5/50
摘要： A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts.
摘要翻译： 一种波长稳定的半导体激光器，其具有在外部谐振腔中具有扩张增益区域的光放大二极管异质结构。 扩口增益区域具有窄孔径端，其可以耦合到单模波导和宽输出端。 接近扩张增益区域的宽端的异质结构的发光表面是部分反射的，并且与外部反射器组合以形成有效不稳定的谐振腔。 靠近窄孔径的腔内发光表面是抗反射涂层的。 外部反射器可以是平面镜或光栅反射器。 透镜或光纤可将扩张增益区域的孔径端耦合到外部反射器。 通过定向光栅反射器或在外部平面镜的前面的空腔中提供棱镜来提供频率选择反馈。 其它过滤元件也可以放置在外部空腔中。 扩张增益区域和波导可以通过由单独的触点提供的电流进行差分泵浦或调制。
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公开(公告)号：USRE35215E
公开(公告)日：1996-04-23
申请号：US307174
申请日：1994-09-16
IPC分类号： G02F1/37 , H01S3/00 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/14 , H01S5/187 , H01S5/40 , H01S5/50 , H01S3/08 , H01S3/10
CPC分类号： H01S5/50 , G02F1/37 , H01S5/0265 , H01S5/005 , H01S5/0092 , H01S5/026 , H01S5/06256 , H01S5/1064 , H01S5/1215 , H01S5/141 , H01S5/187 , H01S5/4025 , H01S5/4031 , H01S5/4068 , H01S5/4087
摘要： A compact semiconductor laser light source providing short wavelength (ultraviolet, blue or green) coherent light by means of frequency doubling of red or infrared light from a high power diode heterostructure. The high power diode heterostructure is a MOPA device having a single mode laser oscillator followed by a multimode, preferably flared, optical power amplifier. A tunable configuration having an external rear reflector grating could also be used. A lens could be integrated with the MOPA to laterally collimate the light before it is emitted. Straight or curved, surface emitting gratings could also be incorporated. An astigmatism-correcting lens system having at least one cylindrical lens surface is disposed in the path of the output from the MOPA to provide a beam with substantially equal lateral and transverse beam width dimensions and beam divergence angles. A nonlinear optical crystal or waveguide is placed in the path of the astigmatism-free symmetrized beam to double the frequency of the light. Single pass or multipass configurations with reflectors could be used, as well as external resonator and segmented, periodically poled waveguide configurations.
摘要翻译： 一种紧凑的半导体激光光源，通过从高功率二极管异质结构的红色或红外光的倍频提供短波长（紫外线，蓝色或绿色）相干光。 高功率二极管异质结构是具有单模激光振荡器的MOPA器件，其后是多模，优选为扩展的光功率放大器。 也可以使用具有外部后反射器光栅的可调构造。 透镜可以与MOPA集成，以在发射光之前对光进行横向准直。 还可以结合直的或弯曲的表面发射光栅。 具有至少一个柱面透镜表面的散光校正透镜系统设置在来自MOPA的输出的路径中，以提供具有基本相等的横向和横向波束宽度尺寸和光束发散角的光束。 将非线性光学晶体或波导放置在无散光对称光束的路径中，将光的频率加倍。 可以使用具有反射器的单通或多通道配置，以及外部谐振器和分段的周期性极化波导配置。
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公开(公告)号：US5651018A
公开(公告)日：1997-07-22
申请号：US654066
申请日：1996-05-28
IPC分类号： H01S3/081 , H01S3/23 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/14 , H01S5/18 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/50 , H01S3/19 , H01S3/08 , H01S3/13
CPC分类号： H01S5/1014 , G02B6/12004 , G02B6/305 , H01S5/026 , H01S5/10 , H01S5/141 , H01S5/20 , H01S3/0818 , H01S3/113 , H01S5/0286 , H01S5/0625 , H01S5/06256 , H01S5/0655 , H01S5/1003 , H01S5/1064 , H01S5/1082 , H01S5/1085 , H01S5/1215 , H01S5/125 , H01S5/14 , H01S5/146 , H01S5/18 , H01S5/187 , H01S5/2036 , H01S5/2063 , H01S5/4025 , H01S5/4062 , H01S5/4087 , H01S5/50
摘要： A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the Wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts.
摘要翻译： 一种波长稳定的半导体激光器，其具有在外部谐振腔中具有扩张增益区域的光放大二极管异质结构。 扩口增益区域具有窄孔径端，其可以耦合到单模波导和宽输出端。 接近扩张增益区域的宽端的异质结构的发光表面是部分反射的，并且与外部反射器组合以形成有效地不稳定的谐振腔。 靠近窄孔径的腔内发光表面是抗反射涂层的。 外部反射器可以是平面镜或光栅反射器。 透镜或光纤可将扩张增益区域的孔径端耦合到外部反射器。 通过定向光栅反射器或在外部平面镜的前面的空腔中提供棱镜来提供频率选择反馈。 其它过滤元件也可以放置在外部空腔中。 扩张增益区域和波导可以通过由单独的触点提供的电流进行差分泵浦或调制。
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公开(公告)号：US06275632B1
公开(公告)日：2001-08-14
申请号：US09724106
申请日：2000-11-25
申请人： Robert G. Waarts , David F. Welch , Stephen G. Grubb , Jean-Luc Archambault , Steven Sanders , Raymond Zanoni , Donald R. Scifres
发明人： Robert G. Waarts , David F. Welch , Stephen G. Grubb , Jean-Luc Archambault , Steven Sanders , Raymond Zanoni , Donald R. Scifres
IPC分类号： G02B634
CPC分类号： G02B6/29319 , H01S3/067 , H01S3/0675 , H01S3/094015 , H01S3/2383 , H01S3/2391 , H01S3/30 , H01S3/302 , H01S5/146 , H01S5/4012 , H01S5/4025 , H01S5/4031 , H04B10/291
摘要： Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of watts, provided on a single mode or multimode fiber.
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公开(公告)号：US6100546A
公开(公告)日：2000-08-08
申请号：US908766
申请日：1997-08-07
申请人： Jo S. Major , David F. Welch , Donald R. Scifres
发明人： Jo S. Major , David F. Welch , Donald R. Scifres
IPC分类号： C23C16/30 , H01L33/32 , H01S5/323 , H01L33/00 , H01L31/0304
CPC分类号： H01S5/3235 , C23C16/303 , C30B25/02 , C30B29/40 , H01L33/32 , H01S5/32 , H01S5/323 , H01S5/32341 , H01S5/32366 , H01S5/32375
摘要： III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
摘要翻译： 公开了III-V族氮化物半导体。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V材料中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光以及中红外和近紫外线发射体的材料。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V材料的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。
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10.发明授权
公开(公告)号：US6130147A
公开(公告)日：2000-10-10
申请号：US820727
申请日：1997-03-18
申请人： Jo S. Major , David F. Welch , Donald R. Scifres
发明人： Jo S. Major , David F. Welch , Donald R. Scifres
CPC分类号： H01S5/3235 , H01L33/32 , H01S5/32 , H01S5/32341 , H01S5/32366 , H01S5/32375
摘要： Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
摘要翻译： 公开了用于形成III族 - 氮化物 - 氮化物半导体材料的方法。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V晶体中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光的材料，以及中红外和近紫外线发射器。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V晶体的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。
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