发明授权
- 专利标题: Method of fabricating BiCMOS device
- 专利标题(中): BiCMOS器件的制造方法
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申请号: US847876申请日: 1992-03-09
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公开(公告)号: US5338694A公开(公告)日: 1994-08-16
- 发明人: Vida Ilderem , Ali A. Iranmanesh , Alan G. Solheim , Christopher S. Blair , Rick C. Jerome , Rajeeva Lahri , Madan Biswal
- 申请人: Vida Ilderem , Ali A. Iranmanesh , Alan G. Solheim , Christopher S. Blair , Rick C. Jerome , Rajeeva Lahri , Madan Biswal
- 申请人地址: CA Santa Clara
- 专利权人: National Semiconductor Corporation
- 当前专利权人: National Semiconductor Corporation
- 当前专利权人地址: CA Santa Clara
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L21/336 ; H01L21/8238 ; H01L21/8249 ; H01L27/06 ; H01L27/092 ; H01L21/265
摘要:
A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wrap-around silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.
公开/授权文献
- US5721442A High density flash EPROM 公开/授权日:1998-02-24