发明授权
- 专利标题： Method of fabricating BiCMOS device
- 专利标题（中）： BiCMOS器件的制造方法
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申请号： US22708申请日： 1993-03-01
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公开(公告)号： US5338696A公开(公告)日： 1994-08-16
- 发明人: Vida Ilderem , Ali A. Iranmanesh , Alan G. Solheim , Christopher S. Blair , Rick C. Jerome , Rajeeva Lahri , Madan Biswal
- 申请人： Vida Ilderem , Ali A. Iranmanesh , Alan G. Solheim , Christopher S. Blair , Rick C. Jerome , Rajeeva Lahri , Madan Biswal
- 申请人地址： CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/336 ; H01L21/8238 ; H01L21/8249 ; H01L27/06 ; H01L27/092 ; H01L21/265
摘要：
A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wraparound silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.
公开/授权文献
- US6009083A Cascade echo canceler arrangement 公开/授权日：1999-12-28