发明授权
- 专利标题： Silicon containing positive resist for DUV lithography
- 专利标题（中）： 含有DUV光刻的正性抗蚀剂的硅
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申请号： US943086申请日： 1992-09-10
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公开(公告)号： US5338818A公开(公告)日： 1994-08-16
- 发明人: William R. Brunsvold , Premlatha Jagannathan , Steve S. Miura , Melvin W. Montgomery , Harbans S. Sachdev , Ratnam Sooriyakumaran
- 申请人： William R. Brunsvold , Premlatha Jagannathan , Steve S. Miura , Melvin W. Montgomery , Harbans S. Sachdev , Ratnam Sooriyakumaran
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： C08G77/38
- IPC分类号： C08G77/38 ; C08G77/04 ; C08G77/16 ; C08G77/18 ; C08L83/04 ; C08L83/06 ; G03F7/039 ; G03F7/075 ; C08G77/00
摘要：
A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.
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