Invention Grant
- Patent Title: Rare earth ion doped optical element
- Patent Title (中): 稀土离子掺杂光学元件
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Application No.: US830311Application Date: 1992-01-31
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Publication No.: US5341237APublication Date: 1994-08-23
- Inventor: Genji Tohmon , Hisanao Sato , Toshihiro Fujita , Jun Ohya
- Applicant: Genji Tohmon , Hisanao Sato , Toshihiro Fujita , Jun Ohya
- Applicant Address: JPX Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JPX Osaka
- Priority: JPX3-249486 19910927
- Main IPC: H01S3/07
- IPC: H01S3/07 ; H01S3/06 ; H01S3/067 ; H01S3/083 ; H01S3/16 ; H01S3/17 ; H01S3/14
Abstract:
The effective rate of deactivation from the terminal state to the ground state of a rare earth ion doped optical material in a four-level amplifying or lasing scheme may be increased greatly by doping the optical material with two rare earth ions, an activator and a deactivator. Energy transfer occurs between the terminal state in the activator ion and the deactivator ion. The transition from the deactivator to the ground state occurs via phonon emission. By increasing the deactivation rate, the efficiency of the laser and the amplifier is increased.
Public/Granted literature
- US4630460A Fastener-setting tool Public/Granted day:1986-12-23
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