- 专利标题： Semiconductor integrated circuit device
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申请号： US152387申请日： 1993-11-16
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公开(公告)号： US5347492A公开(公告)日： 1994-09-13
- 发明人: Masashi Horiguchi , Kiyoo Itoh , Yoshiki Kawajiri , Goro Kitsukawa , Takayuki Kawahara , Takesada Akiba
- 申请人： Masashi Horiguchi , Kiyoo Itoh , Yoshiki Kawajiri , Goro Kitsukawa , Takayuki Kawahara , Takesada Akiba
- 申请人地址： JPX Tokyo JPX Mobara
- 专利权人： Hitachi, Ltd.,Hitachi Device Engineering Co., Ltd.
- 当前专利权人： Hitachi, Ltd.,Hitachi Device Engineering Co., Ltd.
- 当前专利权人地址： JPX Tokyo JPX Mobara
- 优先权： JPX3-086549 19910418; JPX3-222698 19910903
- 主分类号： G01R31/317
- IPC分类号： G01R31/317 ; G05F3/24 ; G11C5/14 ; G11C13/00
摘要：
An intermediate voltage generating circuit for generating a voltage lying between an external power supply voltage and a ground voltage, and two voltage limiter circuits for generating internal power supply voltages and stabilized with this intermediate voltage as a reference are provided in a semiconductor integrated circuit. Even if the external power supply voltage or the ground voltage fluctuates, no disagreement is produced between a logical threshold of a circuit operating on the external power supply voltage and a logical threshold of a circuit operating on the internal power supply voltage.
公开/授权文献
- US4300834A Inductively coupled plasma atomic fluorescence spectrometer 公开/授权日：1981-11-17
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