Invention Grant
- Patent Title: Self-doped complementary field effect transistor
- Patent Title (中): 自掺杂互补场效应晶体管
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Application No.: US971118Application Date: 1992-11-04
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Publication No.: US5355005APublication Date: 1994-10-11
- Inventor: Saied Tehrani , Jun Shen , Herbert Goronkin , Robert Smith
- Applicant: Saied Tehrani , Jun Shen , Herbert Goronkin , Robert Smith
- Applicant Address: IL Schaumburg
- Assignee: Motorola, Inc.
- Current Assignee: Motorola, Inc.
- Current Assignee Address: IL Schaumburg
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/338 ; H01L21/8238 ; H01L27/06 ; H01L27/095 ; H01L29/778 ; H01L29/812 ; H01L31/072 ; H01L29/06 ; H01L29/80 ; H01L31/109
Abstract:
A complementary field effect structure having a first field effect device (26) including a quantum well having a first channel (12). A first doping region (14) is positioned adjacent to a first quantum well and a first gate electrode (29) is positioned so that the first doping region (14) is between the first gate electrode (29) and the first channel (12) . A second field effect device (37) includes a second channel (22) and a second doping region (19) positioned adjacent to the second channel. A second gate electrode (31) is positioned over the second channel (22) so that the second channel (22) is between the second gate electrode (31) and the second doping region (19). An interconnect electrically couples the first gate electrode (29) to the second gate electrode (31).
Public/Granted literature
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