发明授权
- 专利标题： Method for the growing of heteroepitaxial layers
- 专利标题（中）： 异质外延层生长方法
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申请号： US956995申请日： 1992-10-06
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公开(公告)号： US5356510A公开(公告)日： 1994-10-18
- 发明人: Daniel Pribat , Bruno Gerard , Pierre Legagneux
- 申请人： Daniel Pribat , Bruno Gerard , Pierre Legagneux
- 申请人地址： FRX Puteaux
- 专利权人： Thomson-CSF
- 当前专利权人： Thomson-CSF
- 当前专利权人地址： FRX Puteaux
- 优先权： FRX9112352 19911008
- 主分类号： C30B25/02
- IPC分类号： C30B25/02 ; C30B25/04 ; C30B25/18 ; C30B29/40 ; H01L21/20 ; H01L21/205 ; H01L25/02
摘要：
A method according to which a layer of a semiconductor material is made on a substrate by growth in a confinement space defined by this substrate and by a confinement layer, this growth being achieved from a seed. The cross-section of the seed, substantially perpendicular to the general direction of growth, possesses a thick central part framed by two thinned lateral parts. The confinement space has the same cross-section as the seed.
公开/授权文献
- USD264421S Canister 公开/授权日：1982-05-18
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