发明授权
- 专利标题: Oxidation enhancement in narrow masked field regions of a semiconductor wafer
- 专利标题(中): 半导体晶片的窄掩模场区域的氧化增强
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申请号: US175481申请日: 1993-12-30
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公开(公告)号: US5358894A公开(公告)日: 1994-10-25
- 发明人: Pierre Fazan , Viju Mathews , Gurtej S. Sandhu , Mohammed Anjum , Hiang C. Chan
- 申请人: Pierre Fazan , Viju Mathews , Gurtej S. Sandhu , Mohammed Anjum , Hiang C. Chan
- 申请人地址: ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: ID Boise
- 主分类号: H01L21/316
- IPC分类号: H01L21/316 ; H01L21/762 ; H01L21/76
摘要:
A LOCOS process is enhanced by enhancing the depth of field oxide in regions having a narrow field oxide width. Subsequent to forming a pattern of nitride to define the field oxide and active area, photoresist is applied to selected areas of the wafer. An impurity is then applied to the underlying semiconductor substrate in areas not protected by photoresist and nitride. The impurity results in an enhanced oxidation rate and therefore compensates for a thinning effect in selected field oxide areas, such as those having a narrow width. Subsequent formation of the field oxide results in the doped material being consumed by the oxide.
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