发明授权
- 专利标题: Micro-miniature structures and method of fabrication thereof
- 专利标题(中): 微型微型结构及其制造方法
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申请号: US948189申请日: 1992-09-21
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公开(公告)号: US5364742A公开(公告)日: 1994-11-15
- 发明人: Long-Shen Fan , Hans H. Zappe
- 申请人: Long-Shen Fan , Hans H. Zappe
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: C23C28/00
- IPC分类号: C23C28/00 ; B81B5/00 ; B81C99/00 ; G03F7/00 ; G03F7/11 ; G03F7/26 ; H01L21/306 ; H02N1/00 ; G03C5/00 ; B44C1/22
摘要:
In the fabrication of a free-standing miniaturized structure in a range of about 10 to 20 .mu.m thick, a method based on a sacrificial system includes the steps of selecting a substrate material, depositing on the substrate material a sacrificial layer of material and patterning the sacrificial layer to define a shape. A photoresist layer of material is deposited on the sacrificial layer and patterned by contrast-enhanced photolithography to form a photoresist mold. Upon the mold there is plated a metallic layer of material. The electroplated structure conforms to the resist profile and can have a thickness many times that of conventional polysilicon microstructures. The photoresist mold and the sacrificial layer are thereafter dissolved using etchants to form a free standing metallic structure in a range of about 10 to 20 .mu.m thick, with vertical to lateral aspect ratios of 9:1 to 10:1 or more.