发明授权
US5374332A Method for etching silicon compound film and process for forming article
by utilizing the method
失效
利用该方法蚀刻硅化合物膜的方法和成型制品的方法
- 专利标题: Method for etching silicon compound film and process for forming article by utilizing the method
- 专利标题(中): 利用该方法蚀刻硅化合物膜的方法和成型制品的方法
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申请号: US836710申请日: 1992-02-19
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公开(公告)号: US5374332A公开(公告)日: 1994-12-20
- 发明人: Shuji Koyama , Masami Kasamoto , Makoto Shibata
- 申请人: Shuji Koyama , Masami Kasamoto , Makoto Shibata
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-045578 19910220; JPX4-059117 19920214
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/3065 ; H01L21/311 ; H01L21/306
摘要:
A method for etching a silicon compound film comprises etching the silicon compound film in a gas flow rate ratio of CHF.sub.3 to C.sub.2 F.sub.6 of 1 to 6 under etching pressure of 40 to 120 Pa.
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