发明授权
- 专利标题： Low temperature, pressureless sintering of silicon nitride
- 专利标题（中）： 低温无压烧结氮化硅
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申请号： US178376申请日： 1993-12-23
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公开(公告)号： US5376602A公开(公告)日： 1994-12-27
- 发明人: Kevin J. Nilsen
- 申请人： Kevin J. Nilsen
- 申请人地址： MI Midland
- 专利权人： The Dow Chemical Company
- 当前专利权人： The Dow Chemical Company
- 当前专利权人地址： MI Midland
- 主分类号： C04B35/584
- IPC分类号： C04B35/584 ; C04B35/58
摘要：
A silicon nitride-based powder composition that yields sintered bodies having a density of at least 3.15 g/cm.sup.3 by pressureless sintering. The composition includes silicon nitride and an amount of bismuth oxide as a phase transition aid in addition to magnesium oxide, aluminum oxide, zirconium oxide and, optionally, silicon dioxide. The sintered bodies can be produced at temperatures of 1650.degree. C. or less.
公开/授权文献
- US6120022A Random number selector for overhead projectors 公开/授权日：2000-09-19