A method of fabricating a semiconductor structure includes the steps of providing a semiconductor substrate having a material disposed thereon, masking the material with a mask having an appropriate pattern for forming a semiconductor structure, etching unmasked portions of the material so as to form the semiconductor structure, wherein the etching produces a film which attaches onto the semiconductor structure and/or on the semiconductor substrate, and removing the film from the semiconductor structure according to the steps of producing a cryogenic jet stream having cryogenic particles therein, and directing the cryogenic jet stream at the film such that the crogenic jet stream impinges on and causes the film to decrease in temperature so that a high temperature gradient develops between the film and the semiconductor structure, the film detaching from the semiconductor structure and fracturing due to contraction caused by the decrease in temperature and high temperature gradient.