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US5381260A Uniaxially strained semiconductor multiple quantum well device using direction-dependent thermal expansion coefficients in a host substrate 失效
单轴应变半导体多量子阱器件在主机衬底中使用方向依赖的热膨胀系数

Uniaxially strained semiconductor multiple quantum well device using
direction-dependent thermal expansion coefficients in a host substrate
摘要:
The present invention is a spatial light modulator which uses an uniaxiallytrained multiple quantum well (MQW) structure with an anisotropic absorption to rotate the polarization of light normal to the MQW structure. The anisotropy which produces this rotation is the result of a thermally induced in-plane anisotropic strain. The MQW light modulator based on this process has a high contrast ratio of 7000:1 and increased speed as compared to other similar modulators.
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