发明授权
US5391275A Method for preparing a shield to reduce particles in a physical vapor
deposition chamber
失效
制备屏蔽物以减少物理气相沉积室中的颗粒的方法
- 专利标题: Method for preparing a shield to reduce particles in a physical vapor deposition chamber
- 专利标题(中): 制备屏蔽物以减少物理气相沉积室中的颗粒的方法
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申请号: US928566申请日: 1992-08-11
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公开(公告)号: US5391275A公开(公告)日: 1995-02-21
- 发明人: Donald M. Mintz
- 申请人: Donald M. Mintz
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: C23F4/00
- IPC分类号: C23F4/00 ; B08B7/00 ; B08B7/04 ; C23C14/00 ; C23C14/02 ; C23C14/56 ; H01L21/203 ; H01L21/302 ; H01L21/3065 ; C23C14/34 ; B24B1/00 ; B44C1/22
摘要:
In a method for preparing a shield and/or clamping ring prior to use in a physical vapor deposition process, the shield and/or clamping ring is first bead blasted using an abrasive powder, then is treated in an ultrasonic cleaning chamber to remove loose particles and then sputter etched or treated with a plasma. The sputtering or plasma treatment serves to loosen contamination which may form a diffusion barrier and prevent the deposits from bonding to the shield and also serves to roughen the surface of the shield and/or clamping ring, to reduce interface voids and improve adhesion of sputtered material onto the shield and/or clamping ring. The process of the invention results in improved cleaning of the shield and/or clamping ring and improved adhesion of sputtered material thereon, thereby increasing the time before the shield/clamping ring must be cleaned and reducing down-time of the physical vapor deposition chamber.
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