公开(公告)号：US5762748A

公开(公告)日：1998-06-09

申请号：US658784

申请日：1996-06-05

申请人： Thomas Banholzer ,  Dan Marohl ,  Avi Tepman ,  Donald M. Mintz

发明人： Thomas Banholzer ,  Dan Marohl ,  Avi Tepman ,  Donald M. Mintz

IPC分类号： H01L21/302 ,  B24C1/00 ,  C23C14/56 ,  H01J37/16 ,  H01J37/32 ,  H01L21/02 ,  H05H1/00 ,  C23C16/00

CPC分类号： H01J37/32458 ,  B24C1/00 ,  C23C14/564 ,  H01J37/16 ,  Y10S156/914

摘要： Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part be cleaned ultrasonically to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

公开(公告)号：US5391275A

公开(公告)日：1995-02-21

申请号：US928566

申请日：1992-08-11

申请人： Donald M. Mintz

发明人： Donald M. Mintz

IPC分类号： C23F4/00 ,  B08B7/00 ,  B08B7/04 ,  C23C14/00 ,  C23C14/02 ,  C23C14/56 ,  H01L21/203 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/34 ,  B24B1/00 ,  B44C1/22

CPC分类号： C23C14/021 ,  B08B7/0007 ,  B08B7/04 ,  C23C14/564

摘要： In a method for preparing a shield and/or clamping ring prior to use in a physical vapor deposition process, the shield and/or clamping ring is first bead blasted using an abrasive powder, then is treated in an ultrasonic cleaning chamber to remove loose particles and then sputter etched or treated with a plasma. The sputtering or plasma treatment serves to loosen contamination which may form a diffusion barrier and prevent the deposits from bonding to the shield and also serves to roughen the surface of the shield and/or clamping ring, to reduce interface voids and improve adhesion of sputtered material onto the shield and/or clamping ring. The process of the invention results in improved cleaning of the shield and/or clamping ring and improved adhesion of sputtered material thereon, thereby increasing the time before the shield/clamping ring must be cleaned and reducing down-time of the physical vapor deposition chamber.

摘要翻译： 在用于物理气相沉积工艺之前制备屏蔽和/或夹紧环的方法中，首先使用磨料粉末对所述屏蔽和/或夹紧环进行喷砂处理，然后在超声波清洗室中处理以除去松散的颗粒 然后溅射蚀刻或用等离子体处理。 溅射或等离子体处理用于松动可能形成扩散阻挡层并且防止沉积物结合到屏蔽层并且还用于使屏蔽和/或夹紧环的表面粗糙化的污染物，以减少界面空隙并改善溅射材料的粘附 到屏蔽和/或夹紧环上。 本发明的方法导致屏蔽和/或夹紧环的改进的清洁和改善的溅射材料在其上的粘附性，从而增加了屏蔽/夹紧环必须清洁之前的时间，并减少了物理气相沉积室的停机时间。

公开(公告)号：US4661228A

公开(公告)日：1987-04-28

申请号：US863745

申请日：1986-05-15

申请人： Donald M. Mintz

发明人： Donald M. Mintz

IPC分类号： C23C14/06 ,  C23C14/54 ,  H01J37/34 ,  C23C14/00

CPC分类号： H01J37/3266 ,  C23C14/0682 ,  C23C14/54 ,  H01J37/32935 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3458

摘要： An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The wafer is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.

摘要翻译： 用于平坦化半导体晶片上的铝层的装置包括两个沉积源。 第一个来源应用难熔金属硅化物层以形成对氧的屏障。 将晶片移动到第二沉积源，其是包括用于晶片的加热器R.F.的铝溅射装置。 晶片上的偏置和晶片后面的磁镜将等离子体移离晶片。

公开(公告)号：US4865712A

公开(公告)日：1989-09-12

申请号：US080200

申请日：1987-07-28

申请人： Donald M. Mintz

发明人： Donald M. Mintz

IPC分类号： C23C14/54 ,  H01J37/34

CPC分类号： H01J37/3458 ,  C23C14/54 ,  H01J37/3408

摘要： An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The wafer is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.

摘要翻译： 用于平坦化半导体晶片上的铝层的装置包括两个沉积源。 第一个来源应用难熔金属硅化物层以形成对氧的屏障。 将晶片移动到第二沉积源，其是包括用于晶片的加热器R.F.的铝溅射装置。 晶片上的偏置和晶片后面的磁镜将等离子体移离晶片。

公开(公告)号：US4595482A

公开(公告)日：1986-06-17

申请号：US611435

申请日：1984-05-17

申请人： Donald M. Mintz

发明人： Donald M. Mintz

IPC分类号： C23C14/36 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H01L21/31

CPC分类号： H01J37/3458 ,  C23C14/54 ,  H01J37/3408

摘要： A cathode sputter magnetron device is controlled so that there is a uniformity of material supplied to workpieces over the lives of plural geometrically spaced targets from which material is sputtered. Each target is subjected to a separate plasma discharge that is confined to the associated target by a separate magnetic field. The relative powers of the separate plasma discharges are controlled so that the relative powers change as a function of target erosion condition. The impedances of the separate discharges are controlled by varying each separate magnetic field in response to variable currents applied to electromagnets.

摘要翻译： 控制阴极溅射磁控管装置，使得在多个几何间隔的靶材的寿命上提供给工件的材料的均匀性从该材料溅射。 每个靶受到单独的等离子体放电，其通过单独的磁场限制在相关联的靶。 控制单独的等离子体放电的相对功率，使得相对功率作为目标侵蚀条件的函数而变化。 通过响应于施加到电磁体的可变电流改变每个单独的磁场来控制单独放电的阻抗。

公开(公告)号：US6162297A

公开(公告)日：2000-12-19

申请号：US924205

申请日：1997-09-05

申请人： Donald M. Mintz ,  Anantha Subramani ,  Lolita Sharp ,  David Datong Huo

发明人： Donald M. Mintz ,  Anantha Subramani ,  Lolita Sharp ,  David Datong Huo

IPC分类号： C23C14/56 ,  C23C16/44 ,  C23C14/00 ,  C23C16/00

CPC分类号： C23C16/4404 ,  C23C14/564

摘要： A semiconductor fabrication equipment component which is exposed to a film layer fabrication environment exhibits a surface which is embossed with a pattern to provide an enhanced surface area for particle retention. The component is fabricatable using numerous embossing techniques, including knurling. The embossed surface provides the enhanced surface area without imposing a particle load on the treated part.

摘要翻译： 暴露于膜层制造环境的半导体制造设备部件表现出压花图案的表面，以提供用于颗粒保留的增强的表面积。 该组件可使用许多压花技术制造，包括滚花。 压花表面提供增强的表面积，而不会在处理的部件上施加颗粒负荷。

公开(公告)号：US5401319A

公开(公告)日：1995-03-28

申请号：US936433

申请日：1992-08-27

申请人： Thomas Banholzer ,  Dan Marohl ,  Avi Tepman ,  Donald M. Mintz

发明人： Thomas Banholzer ,  Dan Marohl ,  Avi Tepman ,  Donald M. Mintz

IPC分类号： H01L21/302 ,  B24C1/00 ,  C23C14/56 ,  H01J37/16 ,  H01J37/32 ,  H01L21/02 ,  B08B3/12 ,  B08B3/10 ,  B24B1/00

CPC分类号： H01J37/32458 ,  B24C1/00 ,  C23C14/564 ,  H01J37/16 ,  Y10S156/914

摘要： Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part to be cleaned ultrasonically in order to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

摘要翻译： 处理包括铝盖和石英门和屏蔽件的真空室的可更换部件被处理以清洁和粗糙其表面，以增加在所述室中的衬底处理期间沉积在其上的材料的粘附，从而减少设备的停机时间。 部件可以进行化学清洗，冲洗以除去化学品并在第一步骤中干燥; 进行珠粒喷砂以粗糙化部件的表面并改善沉积材料上的附着力; 在接下来的步骤中，要清洁的部件超声波清除所有松散的颗粒; 在最后一步中，在包装或使用该部件之前，清洗和干燥部件以除去水分。 一种新颖的单件加工铝盖具有从第一表面安装到室的门的延伸壁和所述第一表面的覆盖部分，当盖关闭时密封地接合门。

公开(公告)号：US5223457A

公开(公告)日：1993-06-29

申请号：US774127

申请日：1991-10-11

申请人： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Someskh ,  Dan Maydan

发明人： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Someskh ,  Dan Maydan

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H05H1/46 ,  Y10S148/051

摘要： A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

摘要翻译： 能够显着地高于13.56MHz的等离子体处理装置可以产生被动电极的自偏压降低，从而能够实现不损害在高速和高密度集成电路中日益普及的薄层的较软工艺。 使用非常规匹配网络来消除这些较高频率处的反射。 匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

公开(公告)号：US4657654A

公开(公告)日：1987-04-14

申请号：US856430

申请日：1986-04-18

申请人： Donald M. Mintz

发明人： Donald M. Mintz

IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/00

CPC分类号： H01J37/3458 ,  C23C14/54 ,  H01J37/3408

摘要： A first target for a magnetron sputter device has a planar annular emitting surface bounded by an inner radius R1 and an outer radius R2. A second target has a concave emitting surface defined by a side wall of a frustum of a cone. The second target is limited by an inner radius R3 and outer radius R4. R3 is greater than R2. Each target element has pins in diametrically opposite holes to assist in holding the target elements in situ in bayonet slots in the sputter device. The targets are fit closely in cooling rings so that as the targets heat during operation, thermal expansion of the targets assists thermal conduction into the cooling rings.

摘要翻译： 用于磁控溅射装置的第一目标具有由内半径R1和外半径R2界定的平面环形发射表面。 第二目标具有由锥体的截头锥体的侧壁限定的凹形发射表面。 第二个目标受到内半径R3和外半径R4的限制。 R3大于R2。 每个目标元件具有直径相对的孔中的销，以有助于将目标元件原位保持在溅射装置中的卡口槽中。 目标紧密地配合在冷却环中，使得当目标在运行期间加热时，目标的热膨胀有助于热传导到冷却环中。

公开(公告)号：US4627904A

公开(公告)日：1986-12-09

申请号：US811595

申请日：1985-12-19

申请人： Donald M. Mintz

发明人： Donald M. Mintz

IPC分类号： C23C14/36 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H01L21/31 ,  C23C15/00

CPC分类号： C23C14/54 ,  C23C14/351 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3458

摘要： A first target for a magnetron sputter device has a planar annular emitting surface bounded by an inner radius R1 and an outer radius R2. A second target has a sloped emitting surface defined by a side wall of a frustum of a cone. The second target is limited by an inner radius R3 and outer radius R4. R3 is greater than R2. Each target element has pins in diametrically opposite holes to assist in holding the target elements in situ in bayonet slots in the sputter device. The targets are fit closely in cooling rings so that as the targets heat during operation, thermal expansion of the targets assists thermal conduction into the cooling rings. A coil is formed behind the workpiece to act as a mirror to the plasma. The field of the coil moves the plasma away from the workpiece which permits putting high power R.F. bias on the workpiece. The R.F. bias in combination with gas heating the wafer from behind aids in sputtering a coating of superior conformality.

摘要翻译： 用于磁控溅射装置的第一目标具有由内半径R1和外半径R2界定的平面环形发射表面。 第二目标具有由锥体的截头锥体的侧壁限定的倾斜的发射表面。 第二个目标受到内半径R3和外半径R4的限制。 R3大于R2。 每个目标元件具有直径相对的孔中的销，以有助于将目标元件原位保持在溅射装置中的卡口槽中。 目标紧密地配合在冷却环中，使得当目标在运行期间加热时，目标的热膨胀有助于热传导到冷却环中。 在工件后方形成线圈以作为等离子体的反射镜。 线圈的磁场使等离子体离开工件，允许放置高功率R.F. 工件偏置。 R.F. 偏置结合气体从后面加热晶片有助于溅射具有优异共形性的涂层。