发明授权
- 专利标题： Semiconductor device with an elevated bonding pad
- 专利标题（中）： 具有升高的焊盘的半导体器件
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申请号： US124846申请日： 1993-09-22
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公开(公告)号： US5394013A公开(公告)日： 1995-02-28
- 发明人: Kazutoshi Oku , Masahiro Hirosue
- 申请人： Kazutoshi Oku , Masahiro Hirosue
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-332170 19901128
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/485 ; H01L23/48 ; H01L29/54
摘要：
A bonding pad comprises a central film and a peripheral film. The peripheral film is formed around the central film, including a film formed at the same time as the central film, and being continuous with the central film. The level of the central film is made equal to or higher than the level of a protective film on the peripheral film by central film raising means. Therefore, even if the wire moves in a lateral direction when the tip of a wire is pressed against the central film, the tip of the wire does not collide with the protective film. Accordingly, it is possible to avoid the case where cracks are generated in the surface protecting film during wire bonding because of a lateral movement of the wire.
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