发明授权
US5405790A Method of forming a semiconductor structure having MOS, bipolar, and
varactor devices
失效
形成具有MOS，双极和变容二极管器件的半导体结构的方法
- 专利标题： Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
- 专利标题（中）： 形成具有MOS，双极和变容二极管器件的半导体结构的方法
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申请号： US155882申请日： 1993-11-23
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公开(公告)号： US5405790A公开(公告)日： 1995-04-11
- 发明人: Irfan Rahim , Bor-Yuan C. Hwang , Julio Costa
- 申请人： Irfan Rahim , Bor-Yuan C. Hwang , Julio Costa
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/8249
- IPC分类号： H01L21/8249 ; H01L27/06 ; H01L29/93 ; H01L21/265
摘要：
A varactor (10, 115, 122) is formed using a BICMOS process flow. An N well (28) of a varactor region (13) is formed in an epitaxial layer (22) by doping the epitaxial layer (22) with an N type dopant. A cathode region (55, 132) is formed in the N well (28) by further doping the N well (28) with the N type dopant. Cathode electrodes (91, 114) are formed by patterning a layer of polysilicon (62, 86) over the epitaxial layer (22). Subsequently, the cathode electrodes (91, 114) are doped with an N type dopant. A region adjacent the cathode region (55, 132) is doped to form a lightly doped region (103, 117). The lightly doped region (103, 117) is doped with a P type dopant to form an anode region (109, 119).
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