发明授权
US5408116A Grooved gate transistor having source and drain diffused layers with
specified groove corner shape
失效
沟槽栅极晶体管,具有指定槽角形状的源极和漏极扩散层
- 专利标题: Grooved gate transistor having source and drain diffused layers with specified groove corner shape
- 专利标题(中): 沟槽栅极晶体管,具有指定槽角形状的源极和漏极扩散层
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申请号: US105330申请日: 1993-08-09
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公开(公告)号: US5408116A公开(公告)日: 1995-04-18
- 发明人: Junko Tanaka , Toru Toyabe , Shin'ichiro Kimura , Hiromasa Noda , Sigeo Ihara , Kiyoo Itoh , Yasushi Gotoh
- 申请人: Junko Tanaka , Toru Toyabe , Shin'ichiro Kimura , Hiromasa Noda , Sigeo Ihara , Kiyoo Itoh , Yasushi Gotoh
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX4-223842 19920824
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; B82B1/00 ; H01L27/108 ; H01L29/06 ; H01L29/12 ; H01L29/423
摘要:
A finely structured grooved gate transistor of which the threshold voltage does not decrease in spite of the small size and of which the threshold voltage of the transistor can be adjusted by shape. The shape of a groove corner of the transistor as a semiconductor device is contained in a concentric circle having a radius of curvature r.+-.L/5 (L: channel length) and the radius of curvature r, i.e., the geometric parameter has a relationship with the doping concentration as shown in FIG. 1B. Alternatively, the average (a+b)/2 (geometric parameter) of the sum of the two sides opposite the right angle of a right triangle formed of a straight line in contact with the gate bottom in parallel to the substrate surface of a grooved gate transistor, a perpendicular line to the substrate bottom surface from the source and drain ends at a portion formed with a channel and a straight line in contact with the groove corner has a relationship with the doping concentration as shown in FIG. 1B. The threshold voltage is not reduced even when the channel length is decreased by adjusting the groove shape and the doping concentration.
公开/授权文献
- USD427395S Bristles of a brush 公开/授权日:2000-06-27