发明授权
- 专利标题: Method of manufacturing a single crystal layers
- 专利标题(中): 制造单晶层的方法
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申请号: US134293申请日: 1993-10-08
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公开(公告)号: US5411915A公开(公告)日: 1995-05-02
- 发明人: Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
- 申请人: Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
- 申请人地址: JPX Osaka
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX63-245148 19880929; JPX1-68784 19890320; JPX1-83107 19890331
- 主分类号: H01S5/22
- IPC分类号: H01S5/22 ; H01S5/32 ; H01S5/323 ; H01S5/343 ; H01L21/20
摘要:
A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
公开/授权文献
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