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公开(公告)号：US5146466A
公开(公告)日：1992-09-08
申请号：US664866
申请日：1991-04-11
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。
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公开(公告)号：US5264389A
公开(公告)日：1993-11-23
申请号：US896386
申请日：1992-06-10
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326 , Y10S148/064 , Y10S148/11 , Y10S438/973
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。
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公开(公告)号：US5411915A
公开(公告)日：1995-05-02
申请号：US134293
申请日：1993-10-08
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326 , Y10S148/064 , Y10S148/11 , Y10S438/973
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。
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公开(公告)号：US5016252A
公开(公告)日：1991-05-14
申请号：US412786
申请日：1989-09-26
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。
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公开(公告)号：US5619519A
公开(公告)日：1997-04-08
申请号：US372147
申请日：1995-01-13
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326 , Y10S148/064 , Y10S148/11 , Y10S438/973
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。
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公开(公告)号：US5586136A
公开(公告)日：1996-12-17
申请号：US270056
申请日：1994-07-01
申请人： Shoji Honda , Masayuki Shono , Yasuyuki Bessho , Ryoji Hiroyama , Hiroyuki Kase , Takatoshi Ikegami
发明人： Shoji Honda , Masayuki Shono , Yasuyuki Bessho , Ryoji Hiroyama , Hiroyuki Kase , Takatoshi Ikegami
CPC分类号： B82Y20/00 , H01S5/34326 , H01S5/1039 , H01S5/2013 , H01S5/2231 , H01S5/3202 , H01S5/3403
摘要： A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.
摘要翻译： 根据本发明的半导体激光器件包括第一导电类型的GaAs衬底，形成在衬底的一个主表面上的第一导电类型的覆层，具有量子阱结构的有源层，其中拉伸应变量 形成在第一导电类型的包覆层上的阱层和量子势垒层交替层叠，并且在有源层上形成第二导电类型的包覆层。 基板的一个主表面是在<011>方向上从基板的{100}面偏离9°至17°的表面，并且空腔长度不小于150μm不大于300μm 。
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公开(公告)号：US5416790A
公开(公告)日：1995-05-16
申请号：US147779
申请日：1993-11-04
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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公开(公告)号：US5610096A
公开(公告)日：1997-03-11
申请号：US536370
申请日：1995-09-29
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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9.发明授权
公开(公告)号：US5506170A
公开(公告)日：1996-04-09
申请号：US365176
申请日：1994-12-28
申请人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
发明人： Keiichi Yodoshi , Akira Ibaraki , Masayuki Shono , Shoji Honda , Takatoshi Ikegami , Nobuhiko Hayashi , Koutarou Furusawa , Atushi Tajiri , Toru Ishikawa , Kenichi Matsukawa , Teruaki Miyake , Takenori Goto , Mitsuaki Matsumoto , Daisuke Ide , Yasuyuki Bessho
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/3211
摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。
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公开(公告)号：US5555271A
公开(公告)日：1996-09-10
申请号：US363619
申请日：1994-12-23
申请人： Shoji Honda , Masayuki Shono , Ryoji Hiroyama , Yasuyuki Bessho , Hiroyuki Kase , Toyozo Nishida , Takahiro Uetani , Junko Suzuki
发明人： Shoji Honda , Masayuki Shono , Ryoji Hiroyama , Yasuyuki Bessho , Hiroyuki Kase , Toyozo Nishida , Takahiro Uetani , Junko Suzuki
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2231 , H01S5/3202 , H01S5/3213 , H01S5/3218
摘要： On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.
摘要翻译： 在n型GaAs半导体衬底上，与半导体衬底几乎晶格匹配的AlGaInP系晶体形成的n型覆层，与AlGaInP系晶体形成的几乎与晶格匹配的p型覆层， 形成由AlGaInP系晶体或AlInP系晶体构成的p型势垒覆层，p型覆层。 p型势垒覆层具有电子几乎不透射的厚度，具有拉伸应变，并且还具有比p型覆层更大的带隙能量。
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