发明授权
- 专利标题: Method for producing a semiconductor laser device
- 专利标题(中): 半导体激光装置的制造方法
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申请号: US995064申请日: 1992-12-22
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公开(公告)号: US5413956A公开(公告)日: 1995-05-09
- 发明人: Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osamu Yamamoto , Mitsuhiro Matsumoto
- 申请人: Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osamu Yamamoto , Mitsuhiro Matsumoto
- 申请人地址: JPX Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX4-046975 19920304; JPX4-046976 19920304
- 主分类号: H01S5/02
- IPC分类号: H01S5/02 ; H01S5/028 ; H01S5/042 ; H01S5/16 ; H01L21/20
摘要:
A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
公开/授权文献
- US5992728A Endoscope 公开/授权日:1999-11-30