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    Method for producing a semiconductor laser device
    1.
    发明授权
    Method for producing a semiconductor laser device 失效
    半导体激光装置的制造方法

    公开(公告)号：US5413956A

    公开(公告)日：1995-05-09

    申请号：US995064

    申请日：1992-12-22

    申请人： Masanori Watanabe ,  Ken Ohbayashi ,  Kazuaki Sasaki ,  Osamu Yamamoto ,  Mitsuhiro Matsumoto

    发明人： Masanori Watanabe ,  Ken Ohbayashi ,  Kazuaki Sasaki ,  Osamu Yamamoto ,  Mitsuhiro Matsumoto

    IPC分类号： H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S5/16 ,  H01L21/20

    CPC分类号： H01S5/0425 ,  H01S5/164 ,  H01S5/0201 ,  H01S5/0281 ,  Y10S148/026 ,  Y10S148/095 ,  Y10S148/104 ,  Y10S148/106 ,  Y10S148/143 ,  Y10S438/945

    摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

    摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。 制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。

    Light-emitting diode having a surface electrode of a tree-like form
    4.
    发明授权
    Light-emitting diode having a surface electrode of a tree-like form 失效
    具有树状形状的表面电极的发光二极管

    公开(公告)号：US5309001A

    公开(公告)日：1994-05-03

    申请号：US980666

    申请日：1992-11-24

    申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

    发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

    IPC分类号： H01L33/38 ,  H01L33/00

    CPC分类号： H01L33/385 ,  H01L33/38 ,  H01L33/20 ,  H01L33/24

    摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

    摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散， 从二阶分支线性延伸。 表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。 而且，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。

    Semiconductor laser device and method for producing the same
    5.
    发明授权
    Semiconductor laser device and method for producing the same 失效
    半导体激光装置及其制造方法

    公开(公告)号：US6055255A

    公开(公告)日：2000-04-25

    申请号：US790815

    申请日：1997-01-30

    申请人： Takahiro Suyama ,  Ken Ohbayashi ,  Mitsuhiro Matsumoto

    发明人： Takahiro Suyama ,  Ken Ohbayashi ,  Mitsuhiro Matsumoto

    IPC分类号： H01S5/06 ,  H01S5/065 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/0601 ,  H01S5/0658 ,  H01S5/2219

    摘要： A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.

    摘要翻译： 半导体激光器件包括：第一导电类型的半导体衬底; 包括至少第一导电类型的第一包层，有源层和第二导电类型的第二包层的层状结构。 层状结构设置在半导体基板上。 半导体激光装置还包括：形成在层状结构上的具有条纹凹部的电流阻挡结构; 以及第二导电类型的第三包覆层，以覆盖条纹凹部和电流阻挡结构。 电流阻挡结构至少包括具有禁带宽度的可饱和吸收层，其基本上等于有源层的禁带宽度。

    Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same
    6.
    发明授权
    Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same 失效
    半导体激光元件及其调节自身振荡强度的方法

    公开(公告)号：US5592502A

    公开(公告)日：1997-01-07

    申请号：US327452

    申请日：1994-10-21

    申请人： Mitsuhiro Matsumoto ,  Ken Ohbayashi

    发明人： Mitsuhiro Matsumoto ,  Ken Ohbayashi

    IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/068 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/18

    CPC分类号： H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/221 ,  H01S5/2232 ,  H01S5/32316

    摘要： A semiconductor laser element includes: a semiconductor laminated structure for emitting a laser light, including an active layer interposed between a first cladding layer of a first-conductivity type and a second cladding layer of a second-conductivity type, the first cladding layer and the semiconductor layer having lower refractive indices than that of the active layer; and a current light confining means including a stripe-shaped semiconductor layer of the second-conductivity type formed on a surface of the second cladding layer on a side opposite to the active layer, for confining a laser driving current and the laser light in a region of the active layer corresponding to the stripe-shaped semiconductor layer, wherein the refractive index of the first cladding layer is larger than that of the second cladding layer in the semiconductor laminated structure, and the semiconductor laminated structure includes at least one semiconductor layer of the first-conductivity type having a lower refractive index than that of the first cladding layer, disposed between the first cladding layer and the active layer.

    摘要翻译： 半导体激光元件包括：发射激光的半导体层叠结构，包括介于第一导电类型的第一包层和第二导电类型的第二包层之间的有源层，第一包层和 半导体层的折射率低于有源层的折射率; 以及电流限制装置，包括在与有源层相反的一侧形成在第二包层的表面上的第二导电类型的条形半导体层，用于将激光驱动电流和激光限制在区域 所述半导体层叠结构中的所述第一包覆层的折射率比所述第二包层的折射率大，所述半导体层叠结构具有至少一个所述半导体层叠结构的半导体层， 第一导电型，其具有比第一包层更低的折射率，设置在第一包层和有源层之间。