发明授权
- 专利标题： Dynamic memory device having a vertical transistor
- 专利标题（中）： 具有垂直晶体管的动态存储器件
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申请号： US150328申请日： 1993-11-09
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公开(公告)号： US5414289A公开(公告)日： 1995-05-09
- 发明人: Jon T. Fitch , Carlos A. Mazure , Keith E. Witek
- 申请人： Jon T. Fitch , Carlos A. Mazure , Keith E. Witek
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L21/8242 ; H01L27/108 ; H01L29/78 ; H01L29/10 ; H01L29/72
摘要：
A vertical transistor (10) has a substrate (12) and a control electrode conductive layer (18), which functions as a control or gate electrode. A sidewall dielectric layer (22) is formed laterally adjacent the control electrode conductive layer (18) and overlying the substrate (12). The conductive layer (18) at least partially surrounds a channel region (30). A vertical conductive region is formed within a device opening wherein a bottom portion of the conductive region is a first current electrode (28). A middle portion of the vertical conductive region is the channel region (30). A top portion of the vertical conductive region is a second current electrode (34).
公开/授权文献
- USD315286S Lock for an extension pole 公开/授权日：1991-03-12
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