A solid state imaging device which reduces the occurrence of crosstalk between a plurality of picture elements arranged in a linear or matrix form. The solid state imaging device includes a plurality of photosensitive cells formed on a first principal surface of a semiconductor substrate, a transfer electrode formed in a gap area among the cells on the first principal surface to read out charges produced in the cells, a drive metal wiring formed on the transfer electrode within the gap area, a first insulating film covering the cells with a predetermined thickness, and a plurality of metal reflecting films formed on the first insulating film in such a manner that the whole surface of each of the metal reflecting films forms a reflecting surface substantially parallel to a surface of each of the cells on the side of the first principal surface whereby light passed through the photosensitive cells from a side opposite to the first principal surface is reflected back to each of the photosensitive cells.